OH-related emitting centers in interface layer of porous silicon

Physica B: Condensed Matter

Volumn 273-274, Issue , 1999, Pages 955-958

  Torchynska, T V ^a   Sheinkman, M K ^b   Korsunskaya, N E ^b   Khomenkovan, L Yu ^b   Bulakh, B M ^b   Dzhumaev, B R ^b   Many, A ^c   Goldstein, Y ^c   Savir, E ^c  

^a INSTITUTO POLITÉCNICO NACIONAL   (Mexico)

^b INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

^c HEBREW UNIVERSITY OF JERUSALEM   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

FOURIER TRANSFORM INFRARED SPECTROSCOPY; LIGHT ABSORPTION; PHOTOLUMINESCENCE; POROUS SILICON; SECONDARY ION MASS SPECTROMETRY;

PHOTOLUMINESCENCE EXCITATION MECHANISMS;

SEMICONDUCTING SILICON;

EID: 0033350971     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(99)00563-3     Document Type: Article

References (11)

1. A.G. Gullis, L.T. Canham, P.D.J. Calcott, Appl. Phys. Rev., J. Appl. Phys. 82 (3) (1997) 909.
2. Y. Kanemitsu, T. Matsumoto, T. Futagi, H. Mimura, Jpn. J. Appl. Phys. 32 (1993) 411.
3. J.M. Lavine, S.P. Sawan, Y.T. Shieh, A.J. Bellezza, Appl. Phys. Lett. 62 (1993) 1099.
4. H.D. Fuchs, M. Stutzmann, M.S. Brandt, M. Rosenbauer, J. Weber, A. Breischwerdt, P. Deak, M. Cardona, Phys. Rev. B 48 (1993) 8172.
5. S.M. Prokes, O.J. Glembocli, V.M. Berdudez, R. Kaplan, Phys. Rev. B 45 (1992) 13788.
6. M.S. Brandt, H.D. Fuhs, M. Stutzmann, J. Weber, M. Cardona, Solid State Commun. 81 (1992) 307.
7. H. Aoyagi, A. Motohashi, A. Kinoshita, T. Aono, A. Satou, Jpn. J. Appl. Phys. Part 2 32 (1A/B) (1993) L1.
8. L. Wang, M.T. Wilson, N.M. Haegel, Appl. Phys. Lett. 62 (1993) 1113.
9. T.V. Torchinskaya, N.E. Korsunskaya, L.Yu. Khomenkova, B.R. Dzhumaev, N.P. Baran, B.M. Bulakh, G. Polisskii, Ukr. J. Phys. 44 (N 3) (1999) 394.
10. M.S. Brodin, V.N. Bykov, D.B. Dan'ko, A.A. Kipen, Ukr. Fiz. Zhurn. 40 (9) (1995) 933.
11. G.I. Denisenko, Synthesis and properties of modifying zeolites, Author's Doctor Degree thesis, Institute of Physical Chemistry, Kyiv, Ukraine, 1995.