Effect of hydrogen passivation on charge storage in silicon quantum dots embedded in silicon nitride film

Applied Physics Letters

Volumn 86, Issue 14, 2005, Pages 1-3

  Cho, Chang Hee ^a   Kim, Baek Hyun ^a   Kim, Tae Wook ^a   Park, Seong Ju ^a   Park, Nae Man ^b   Sung, Gun Yong ^b  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; HYDROGEN; PASSIVATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON; SILICON NITRIDE; TRANSMISSION ELECTRON MICROSCOPY;

CHARGE STORAGE CHARACTERISTICS; CHARGING EFFECTS; METAL-ISULATOR-SEMICONDUCTOR (MIS); NANOCRYSTAL MEMORY DEVICES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 17444371623     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1894595     Document Type: Article

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