Three approaches to surface substance role investigation in porous silicon photoluminescence and its excitation

Journal of Physics and Chemistry of Solids

Volumn 61, Issue 6, 2000, Pages 937-941

  Torchynska, T V ^a   Korsunska, N E ^b   Dzhumaev, B R ^b   Khomenkova, L Yu ^b  

^a INSTITUTO POLITÉCNICO NACIONAL   (Mexico)

^b INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

Author keywords

[No Author keywords available]

Indexed keywords

AGING OF MATERIALS; ANODIC OXIDATION; BAND STRUCTURE; ELECTRIC EXCITATION; HEAT TREATMENT; LIGHT ABSORPTION; PHOTOLUMINESCENCE; SECONDARY ION MASS SPECTROMETRY; SILICON WAFERS; SPECTRUM ANALYSIS; SURFACE PROPERTIES;

INFRARED VIBRATION SPECTRA MEASUREMENTS; ULTRAVIOLET BANDS; VISIBLE BAND;

POROUS SILICON;

EID: 0033904370     PISSN: 00223697     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3697(99)00393-5     Document Type: Article

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