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Journal of Non-Crystalline Solids

Volumn 227-230, Issue PART 2, 1998, Pages 1202-1206

Hydrogenated amorphous and polycrystalline silicon TFTs by hot-wire CVD

(4) Meiling, H a Brockhoff, A M a Rath, J K a Schropp, R E I a

a UTRECHT UNIVERSITY (Netherlands)

Author keywords

Amorphous silicon; Gate biass stress; Hot wire CVD; Polycrystalline silicon; Raman spectroscopy; Transistors

Indexed keywords

ACTIVATION ENERGY; AMORPHOUS SILICON; CHEMICAL VAPOR DEPOSITION; ELECTRIC CURRENTS; GATES (TRANSISTOR); POLYCRYSTALLINE MATERIALS; RAMAN SPECTROSCOPY; SATURATION (MATERIALS COMPOSITION); SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH;

HOT WIRE CHEMICAL VAPOR DEPOSITION (HWCVD);

THIN FILM TRANSISTORS;

EID: 0032065188 PISSN: 00223093 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-3093(98)00298-1 Document Type: Article

Times cited : (25)

References (9)

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