Electrical and chemical analysis of zinc oxide interfaces with high dielectric constant barium tantalate and aluminum oxide in metal-insulator- semiconductor structures fabricated at Low temperatures

Thin Solid Films

Volumn 520, Issue 1, 2011, Pages 475-480

  Kuo, Fang Ling ^a   Maneshian, Mohammad H ^a   Shepherd, Nigel D ^a  

^a UNIVERSITY OF NORTH TEXAS   (United States)

Author keywords

Aluminium oxide; Barium tantalate; Dielectric constant; High materials; Interface trap density; Metal insulator semiconductor; Sputtering; Zinc oxide

Indexed keywords

ALUMINIUM OXIDE; ALUMINUM OXIDES; CAPACITANCE VOLTAGE MEASUREMENTS; ELECTRON TRAPPING; FREQUENCY DISPERSION; HIGH DIELECTRIC CONSTANTS; INTERFACE TRAP DENSITY; INTERFACE TRAPS; LOW TEMPERATURES; METAL INSULATOR SEMICONDUCTOR STRUCTURES; METAL INSULATORS; METAL-INSULATOR-SEMICONDUCTORS; MIS STRUCTURE; OXIDE INTERFACES; POTENTIAL APPLICATIONS; RADIO-FREQUENCY-MAGNETRON SPUTTERING; ROOM TEMPERATURE; SEMICONDUCTOR STRUCTURE; SUBSTRATE HEATING; TRANSPARENT THIN FILM TRANSISTOR; TRAP DENSITY; TRAPPED CHARGE; ZNO; ZNO FILMS;

ALUMINUM; BARIUM; CHEMICAL ANALYSIS; CHEMICALS; DEPTH PROFILING; DIELECTRIC FILMS; ELECTRIC CHARGE; LEAKAGE CURRENTS; METAL INSULATOR BOUNDARIES; MIS DEVICES; OXIDES; PHOTOELECTRON SPECTROSCOPY; THIN FILM DEVICES; THIN FILM TRANSISTORS; THIN FILMS; TRANSISTORS; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC; ZINC OXIDE;

SEMICONDUCTOR INSULATOR BOUNDARIES;

EID: 80054013024     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2011.06.071     Document Type: Article

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