Conduction mechanisms in barium tantalates films and modification of interfacial barrier height

IEEE Transactions on Electron Devices

Volumn 47, Issue 1, 2000, Pages 71-76

  Lee, Yun Hi ^a   Kim, Young Sik ^a   Kim, Dong Ho ^a   Ju, Byeong Kwon ^a   Oh, Myung Hwan ^a  

^a Korea Institute of Science and Technology   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BARIUM COMPOUNDS; CAPACITORS; CURRENT VOLTAGE CHARACTERISTICS; DISPLAY DEVICES; ELECTRIC FIELDS; LEAKAGE CURRENTS; MAGNETRON SPUTTERING; PERMITTIVITY; SURFACE TREATMENT; TEMPERATURE; THIN FILMS;

BARIUM TANTALATES FILMS; CONDUCTION MECHANISM; INTERFACIAL BARRIER HEIGHT; OHMIC CONDUCTION; OPTOELECTRONIC DISPLAY; PLASMA TREATMENT; SCHOTTKY EMISSION; SPUTTERED FILMS; THIN FILM ELECTROLUMINESCENT DEVICE;

DIELECTRIC FILMS;

EID: 0033882894     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.817569     Document Type: Article

References (25)