Characteristics of MIS capacitors using Ta2O5 films deposited on ZnO/p-Si

Microelectronic Engineering

Volumn 66, Issue 1-4, 2003, Pages 637-642

  Noh, Y S ^a   Chatterjee, S ^b   Nandi, S ^b   Samanta, S K ^b   Maiti, C K ^b   Maikap, S ^c   Choi, W K ^a  

^a Korea Institute of Science and Technology   (South Korea)

^b INDIAN INSTITUTE OF TECHNOLOGY   (India)

^c Seoul National University   (South Korea)

Author keywords

C V; Charge trapping; MIS capacitor; Ta2O5; ZnO

Indexed keywords

CAPACITORS; DEPOSITION; ELECTRIC POTENTIAL; ELECTRON TRAPS; MIS DEVICES; PLASMAS; SEMICONDUCTING ZINC COMPOUNDS; TANTALUM COMPOUNDS;

CHARGE TRAPPING;

THIN FILMS;

EID: 0344490417     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(02)00976-0     Document Type: Conference Paper

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