Nanometric AlGaN/GaN HEMT performance with implant or mesa isolation

IEEE Electron Device Letters

Volumn 32, Issue 8, 2011, Pages 1056-1058

  Sun, Haifeng ^a   Alt, Andreas R ^a   Tirelli, Stefano ^a   Marti, Diego ^a   Benedickter, Hansruedi ^a   Piner, Edwin ^b   Bolognesi, C R ^a  

^a ETH ZURICH   (Switzerland)

^b TEXAS STATE UNIVERSITY   (United States)

Author keywords

AlGaN GaN; high electron mobility transistor (HEMT); implant isolation; millimeter wave transistors

Indexed keywords

ALGAN/GAN; ALGAN/GAN HEMTS; DC CHARACTERISTICS; GAN HEMTS; GATE-LEAKAGE CURRENT; HIGH-ELECTRON MOBILITY TRANSISTOR (HEMT); HIGH-SPEED; ISOLATION PROCESS; IV CHARACTERISTICS; LARGE-SIGNALS; MESA ISOLATION; MICROWAVE NOISE PERFORMANCE; MILLIMETER-WAVE TRANSISTORS; NANOMETRICS; PARAMETRIC DISTRIBUTIONS; PERFORMANCE METRICS; SMALL SIGNAL MODEL;

CUTOFF FREQUENCY; DISPLAY DEVICES; ELECTRON MOBILITY; GALLIUM NITRIDE; GATE DIELECTRICS; HETEROJUNCTION BIPOLAR TRANSISTORS; ION IMPLANTATION; LEAKAGE CURRENTS; MILLIMETER WAVE DEVICES; TRANSISTORS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 79960905479     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2151172     Document Type: Article

References (8)

1. T. Ueda, Y. Uemoto, T. Tanaka, and D. Ueda, "GaN transistors for power switching and millimeter-wave applications," Int. J. High Speed Electron. Syst., vol. 19, no. 1, pp. 145-152, Jan. 2009.
2. N. A. Moser, J. K. Gillespie, G. D. Via, A. Crespo, M. J. Yannuzzi, G. H. Jessen, R. C. Fitch, B. Luo, F. Ren, B. P. Gila, and S. J. Pearton, "Effects of surface treatments on isolation currents in AlGaN/GaN highelectron-mobility transistors," Appl. Phys. Lett., vol. 83, no. 20, pp. 4178-4180, Nov. 2003.
3. Y.-S. Lin, Y.-W. Lain, and S. S. H. Hsu, "AlGaN/GaN HEMTs with low leakage current and high on-off current ratio," IEEE Electron. Dev. Lett., vol. 31, no. 2, pp. 102-104, Feb. 2010.
4. G. Hanington, Y. M. Hsin, Q. Z. Liu, P. M. Asbeck, S. S. Lau, M. A. Khan, J.W. Yang, and Q. Chen, "P/He ion implant isolation technology for AlGaN/GaN HEMTs," Electron. Lett., vol. 34, no. 2, pp. 193-195, Jan. 1998. (Pubitemid 128561213)
5. J. W. Johnson, E. L. Piner, A. Vescan, R. Therrien, P. Rajagopal, J. C. Roberts, J. D. Brown, S. Singhal, and K. J. Linticum, "12 W/mm AlGaN-GaN HFETs on silicon substrates," IEEE Electron Device Lett., vol. 25, no. 7, pp. 459-461, Jul. 2004.
6. M. Werquin, N. Vellas, Y. Guhel, D. Ducatteau, B. Boudart, J. C. Pesant, Z. Bougrioua, M. Germain, J. C. De Jaeger, and C. Gaquière, "First results of AlGaN/GaN HEMTs on sapphire substrate using an argon-ion implant isolation technology," Microw. Opt. Technol. Lett., vol. 46, no. 4, pp. 311-315, Aug. 2005. (Pubitemid 41205764)
7. J.-Y. Shiu, J.-C. Huang, V. Desmaris, C.-T. Chang, C.-Y. Lu, K. Kumakura, H. Zirath, N. Rorsman, and E. Y. Chang, "Oxygen ion implantation isolation planar process for AlGaN/GaN HEMTs," IEEE Electron Device Lett., vol. 28, no. 6, pp. 476-478, Jun. 2007. [Online]. Available: http://www.srim.org/ (Pubitemid 46845999)
8. R. J. Shul, L. Zhang, A. G. Baca, C. G. Willison, J. Han, S. J. Pearton, K. P. Lee, and F. Ren, "Inductively coupled high-density plasma-induced etch damage of MESFETs," Solid-State Electron., vol. 45, no. 1, pp. 13-17, Jan. 2001. (Pubitemid 32093083)