Schottky barrier height inhomogeneity-induced deviation from near-ideal Pd/InAlN schottky contact

IEEE Electron Device Letters

Volumn 32, Issue 5, 2011, Pages 620-622

  Chen, Z T ^a   Fujita, K ^a   Ichikawa, J ^a   Egawa, T ^a  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Current voltage (I V ); GaN; InAlN; quantum dot; Schottky barrier height (SBH) inhomogeneity; Schottky diode

Indexed keywords

CURRENT VOLTAGE; GAN; INALN; QUANTUM DOT; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY DIODES;

DIODES; GALLIUM NITRIDE; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR QUANTUM DOTS; SURFACE STRUCTURE;

SEMICONDUCTOR METAL BOUNDARIES;

EID: 79955546671     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2110634     Document Type: Article

References (18)

1. R. Butte, J-F. Carlin, E. Feltin,M. Gonschorek, S. Nicolay, G. Christmann, D. Simeonov, A. Castiglia, J. Dorsaz, H. J. Buehlmann, S. Christopoulos, G. Baldassarri Hoger von Hogersthal, A. J. D. Grundy, M. Mosca, C. Pinquier, M. A. Py, F. Demangeot, J. Frandon, P. G. Lagoudakis, J. J. Baumberg, and N. Grandjean, "Current status of AlInN layers latticematched to GaN for photonics and electronics," J. Phys D, Appl. Phys., vol. 40, no. 20, pp. 6328-6344, Oct. 2007. (Pubitemid 350093020)
2. A. Dadgar, F. Schulze, J. Bläsing, A. Diez, A. Krost, M. Neuburger, E. Kohn, I. Daumiller, and M. Kunze, "High-sheet-charge-carrier-density AlInN/GaN field-effect transistors on Si(111)," Appl. Phys. Lett., vol. 85, no. 22, pp. 5400-5402, Nov. 2004. (Pubitemid 40043591)
3. M. Gonschorek, J.-F. Carlin, E. Feltin, M. A. Py, and N. Grandjean, "High electron mobility lattice-matched AlInN/GaN field-effect transistor heterostructures," Appl. Phys. Lett., vol. 89, no. 6, p. 062106, Aug. 2006.
4. A. Crespo, M. M. Bellot, K. D. Chabak, J. K. Gillespie, G. H. Jessen, V. Millier, M. Trejo, G. D. Via, D. E. Walker, B. W. Winningham, H. E. Smith, T. A. Cooper, X. Gao, and S. Guo, "High-power Ka-band performance of AlInN/GaN HEMT with 9.8-nm-thin barrier," IEEE Electron Device Lett., vol. 31, no. 1, pp. 2-4, Jan. 2010.
5. N. Sarazin, E. Morvan, M. A. di Forte Poission, M. Oualli, C. Gaquiere, O. Jardel, O. Drisse, M. Tordjman, M. Magis, and S. L. Delage, "AlInN/AlN/GaN HEMT technology on SiC with 10-W/mm and 50% PAE at 10 GHz," IEEE Electron Device Lett., vol. 31, no. 1, pp. 11-13, Jan. 2010.
6. S. Senda, H. Jiang, and T. Egawa, "AlInN-based ultraviolet photodiode grown by metal organic chemical vapor deposition," Appl. Phys. Lett., vol. 92, no. 20, p. 203507, May 2008.
7. Z. T. Chen, S. X. Tan, Y. Sakai, and T. Egawa, "Improved performance of InAlN-based Schottky solar-blind photodiodes," Appl.Phys.Lett., vol. 94, no. 21, p. 213504, May 2009.
8. J. Kuzmik, A. Kostopoulos, G. Konstantinidis, J.-F. Carlin, A. Georgakilas, and D. Pogany, "InAlN/GaN HEMTs: A first insight into technological optimization," IEEE Trans. Electron Devices, vol. 53, no. 3, pp. 422-426, Mar. 2006. (Pubitemid 43280593)
9. E. Arslan, S. Altindal, S. Ozcelik, and E. Ozbay, "Tunneling current via dislocations in Schottky diodes on AlInN/AlN/GaN heterostructures," Semicond. Sci. Technol., vol. 24, no. 7, p. 075003, Jul. 2009.
10. W. Chihaoui, J.-M. Bluet, M.-A. Poisson, N. Sarazin, C. Dua, and C. Bru-Chevallier, "Current deep level transient spectroscopy analysis of AlInN/GaN high electron mobility transistors: Mechanism of gate leakage," Appl. Phys. Lett., vol. 96, no. 7, p. 072107, Feb. 2010.
11. D. Donoval, A. Chvála, R. Šramatý, J. Kováè, J.-F. Carlin, N. Grandjean, G. Pozzovivo, J. Kuzmík, D. Pogany, G. Strasser, and P. Kordo , "Current transport and barrier height evaluation in Ni/InAlN/GaN Schottky diodes," Appl. Phys. Lett., vol. 96, no. 22, p. 223501, May 2010.
12. E. H. Rhoderick and R. H. Williams, Metal-Semiconductor Contacts. Oxford, U.K.: Clarendon, 1988.
13. J. Kuzmik, "InAlN/(In)GaN high electron mobility transistors: Some aspects of the quantum well heterostructure proposal," Semicond. Sci. Technol., vol. 17, no. 6, p. 540, Jun. 2002.
14. D. Donoval, M. Barus, and M. Zdimal, "Analysis of I-V measurements on PtSi-Si Schottky structure on a wide temperature range," Solid-State Electron., vol. 34, no. 12, pp. 1365-1373, Dec. 1991.
15. E. Arslan, a. Altýndal, S. Özçelik, and E. Ozbay, "Dislocation-governed current-transport mechanism in (Ni/Au)-AlGaN/AlN/GaN heterostructure," J. Appl. Phys., vol. 105, no. 2, p. 023705, Jan. 2009.
16. A. G. Milnes, Semiconductor Devices and Integrated Electronics. New York: Van Nostrand Reinhold, 1980, p. 110.
17. R. T. Tung, "Electron transport at metal-semiconductor interface: General theory," Phys. Rev. B., vol. 45, no. 23, pp. 13 509-13 523, Jun. 1992.
18. Z. T. Chen, Y. Sakai, and T. Egawa, "Photoluminescence studies of highquality InAlN layer lattice-matched to GaN grown by metal organic chemical vapor deposition," Appl. Phys. Lett., vol. 96, no. 19, p. 191911, May 2010.