Millimeter-wave GaN HFET technology

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6894, Issue , 2008, Pages

  Higashiwaki, Masataka ^a,c   Mimura, Takashi ^a,b   Matsui, Toshiaki ^a  

^a NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY   (Japan)

^b FUJITSU LABORATORIES LTD   (Japan)

^c University of California   (United States)

Author keywords

Catalytic chemical vapor deposition (Cat CVD); Current gain cutoff frequency (fT); GaN; Heterostructure field effect transistors (HFETs); Maximum oscillation frequency (fmax); Millimeter wave

Indexed keywords

ALUMINUM; CHEMICAL VAPOR DEPOSITION; COMPOSITION EFFECTS; COMPUTER NETWORKS; CUBIC BORON NITRIDE; GALLIUM; GALLIUM ALLOYS; GALLIUM COMPOUNDS; GALLIUM NITRIDE; METALLIZING; MILLIMETER WAVES; NITRIDES; PASSIVATION; PHOTOACOUSTIC EFFECT; PIGMENTS; SEMICONDUCTING GALLIUM; TECHNOLOGY; TRANSISTORS; WAVE ENERGY CONVERSION; WAVES;

(E ,3E) PROCESS; (OTDR) TECHNOLOGY; ALGAN/GAN HETEROSTRUCTURE; BARRIER LAYER (BL); BASED GATES; CATALYTIC CHEMICAL VAPOR DEPOSITION (CAT CVD); GAN HFET; HIGH-FREQUENCY (HF); MILLIMETER WAVE APPLICATIONS; MILLIMETER-WAVE (MM-WAVE); NITRIDE MATERIALS; OPTICAL INSTRUMENTATION; SHORT-CHANNEL EFFECT (SCE);

FIELD EFFECT TRANSISTORS;

EID: 42149138431     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.767574     Document Type: Conference Paper

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