Time-resolved photoluminescence measurements of quantum dots in InGaN multiple quantum wells and light-emitting diodes

Journal of Applied Physics

Volumn 86, Issue 2, 1999, Pages 1114-1118

  Pophristic, M ^a   Long, F H ^a   Tran, C ^b   Ferguson, I T ^b   Karlicek Jr , R F ^b  

^a RUTGERS UNIVERSITY   (United States)

^b EMCORE CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROLUMINESCENCE; LIGHT EMITTING DIODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHASE SEPARATION; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; SILICON WAFERS;

TIME-RESOLVED PHOTOLUMINESCENCE (TRPL);

SEMICONDUCTOR QUANTUM DOTS;

EID: 0032621584     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.370865     Document Type: Article

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