Anneal-induced interdiffusion in 1.3-μm GaInNAs/GaAs quantum well structures grown by molecular-beam epitaxy

Journal of Applied Physics

Volumn 99, Issue 1, 2006, Pages

  Liu, H F ^a   Dixit, V ^a   Xiang, N ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CONSTANT DIFFUSION COEFFICIENT; FICK'S DIFFUSION MODEL; NITROGEN BONDING; TRANSITION ENERGY;

ACTIVATION ENERGY; ANNEALING; DIELECTRIC DEVICES; GALLIUM ALLOYS; INTERDIFFUSION (SOLIDS); MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SCATTERING PARAMETERS; X RAY DIFFRACTION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 30844451591     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2150259     Document Type: Article

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