X-ray and cathodoluminescence study on the effect of intentional long time annealing of the InGaN/GaN multiple quantum wells grown by MOCVD

Journal of Crystal Growth

Volumn 280, Issue 3-4, 2005, Pages 357-363

  Jeong, T S ^a   Kim, J H ^a   Han, M S ^a   Lim, K Y ^a   Youn, C J ^a  

^a Chonbuk National University   (South Korea)

Author keywords

A1. Characterization; A1. Intermixing; A1. Thermal annealing; A3. Metalorganic chemical vapor deposition; B1. Nitrides

Indexed keywords

ANNEALING; CATHODOLUMINESCENCE; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITRIDES; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; X RAY DIFFRACTION ANALYSIS;

INTERMIXING; QUANTIZED ENERGIES; RED SHIFT; THERMAL ANNEALING;

X RAYS;

EID: 20344375008     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.04.002     Document Type: Article

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