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Physical Review B - Condensed Matter and Materials Physics

Volumn 80, Issue 16, 2009, Pages

Compositional dependence of the bowing parameter for highly strained InGaAs/GaAs quantum wells

(10) Sharma, T K a Jangir, R a Porwal, S a Kumar, R a Ganguli, Tapas a Zorn, M b,c Zeimer, U b Bugge, F b Weyers, M b Oak, S M a

a RAJA RAMANNA CENTRE FOR ADVANCED TECHNOLOGY (India)

b LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK (Germany)

c JENOPTIK Diode Lab GmbH (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 72849110029 PISSN: 10980121 EISSN: 1550235X Source Type: Journal
DOI: 10.1103/PhysRevB.80.165403 Document Type: Article

Times cited : (21)

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