Enhanced emission efficiency of InGaN films with Si doping

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 3, Issue , 2006, Pages 1944-1948

  Li, Da Bing ^a   Liu, Yu Huai ^a   Katsuno, Takuya ^a   Nakao, Keisuke ^a   Nakamura, Kazuya ^a   Aoki, Masakazu ^a   Miyake, Hideto ^a   Hiramatsu, Kazumasa ^a  

^a MIE UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL QUALITY; EMISSION EFFICIENCY; HIGH-RESOLUTION X-RAY DIFFRACTION (HRXRD); 68.55.JK; 68.55.LN; 78.60.HK; 78.66.FD; 81.05.EA; 81.15.GH;

CATHODOLUMINESCENCE; DOPING (ADDITIVES); INDIUM COMPOUNDS; OPTICAL PROPERTIES; SCANNING ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS; EFFICIENCY; SEMICONDUCTING SAMARIUM COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM WELLS; SURFACE DEFECTS; X RAY DIFFRACTION;

THIN FILMS; SILICON;

EID: 33746340597     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200565286     Document Type: Conference Paper

References (9)

1. H. Kanie and T. Yoshimura, phys. stat. sol. (c) 0, 2729 (2003).
2. K. Kusakabe, T. Hara, and K. Ohkawa, J. Appl. Phys. 97, 043503 (2005).
3. M.-Y. Ryu, Y. J. Yu, E.-J. Shin, P. W. Yu, J. I. Lee, S. K. Yu, E. S. Oh, O. H. Nam, C. S. Sone, Y. J. Park, and T. I. Kim, Solid State Commun. 116, 675 (2000).
4. K. Uchida, T. Tang, S. Goto, T. Mishima, A. Niwa, and J. Gotoh, Appl. Phys. Lett. 74, 1153 (1999).
5. X. H. Wu, C. R. Elsass, A. Abare, M. Mack, S. Keller, P. M. Petroff, S. P. DenBaars, J. S. Speck, and S. J. Rosner, Appl. Phys. Lett. 72, 692 (1998).
6. Y. Chen, T. Takeuchi, H. Amano, I. Akasaki, N. Yamada, Y. Kaneko, and S. Y. Wang, Appl. Phys. Lett. 72, 710 (1998).
7. J. E. Norhrup and L. T. Romano, Appl. Phys. Lett. 74, 2319 (1999).
8. A. L. Rosa, J. Neugebauer, J. E. Norhrup, C.-D. Lee, and R. M. Feenstra, Appl. Phys. Lett. 80, 2008 (2002).
9. K. S. Son, D. Kim, H. K. Cho, K. Lee, S. Kim, K. Park, and J. Kim, phys. stat. sol. (c) 0, 2095 (2003).