Polarization switching and relaxation dynamics of bismuth layered ferroelectric thin films: Role of oxygen defect sites and crystallinity

Physical Review B - Condensed Matter and Materials Physics

Volumn 84, Issue 9, 2011, Pages

  Lee, Ji Hye ^a   Shin, Ran Hee ^a   Jo, William ^a  

^a Ewha Womans University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 80053482549     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.84.094112     Document Type: Article

References (62)

1. D.-H. Do, P. G. Evans, E. D. Isaacs, D. M. Kim, C. B. Eom, and E.M. Dufresne, Nat. Mater. 1476-1122 10.1038/nmat1122 3, 365 (2004).
2. J. F. Scott, Ferroelectric Memories (Springer, Berlin, 2000), p. 4.
3. J. F. Scott and C. A. Paz de Araujo, Science SCIEAS 0036-8075 10.1126/science.246.4936.1400 246, 1400 (1989).
4. A. S. Mischenko, Q. Zhang, J. F. Scott, R. W. Whatmore, and N. D. Mathur, Science SCIEAS 0036-8075 10.1126/science.1123811 311, 1270 (2006). (Pubitemid 43334712)
5. J. F. Scott, Science 0036-8075 10.1126/science.1129564 16, 954 (2007).
6. B. G. Chae, Y. S. Yang, S. H. Lee, M. S. Jang, S. J. Lee, S. H. Kim, W. S. Baek, and S. C. Kwon, Thin Solid Films THSFAP 0040-6090 10.1016/S0040- 6090(02)00254-7 410, 107 (2002). (Pubitemid 34613866)
7. W. L. Warren, D. Dimos, B. A. Tuttle, G. E. Pike, R. W. Schwartz, P. J. Clews, and D. C. Mclntyre, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.359083 77, 6695 (1995).
8. I. K. Yoo and S. B. Desu, Phys. Status Solidi A PSSABA 0031-8965 10.1002/pssa.2211330242 133, 565 (1992).
9. J. Lee and R. Ramesh, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.116421 68, 484 (1996). (Pubitemid 126684410)
10. D. Fu, K. Ishikawa, M. Minakata, and H. Suzuki, Jpn. J. Appl. Phys. JAPNDE 0021-4922 10.1143/JJAP.40.5683 40, 5683 (2001).
11. V. C. Lo, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1520718 92, 6778 (2002).
12. B. H. Park, S. J. Hyun, S. D. Bu, T. W. Noh, J. Lee, H.-D. Kim, T.H. Kim, and W. Jo, Appl. Phys. Lett. 0003-6951 10.1063/1.123709 74, 1907 (1999).
13. W. L. Warren, B. A. Tuttle, and D. Dimos, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.114515 67, 1426 (1995).
14. H. M. Duiker, P. D. Beale, J. F. Scott, C. A. Paz de Araujo, B. M. Melnick, J. D. Cuchiaro, and L. D. McMillan, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.346948 68, 5783 (1990).
15. D. Dimos, H. N. Al-Shareef, W. L. Warren, and B. A. Tuttle, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.362968 80, 1682 (1996).
16. I. K. Yoo, S. B. Desu, and J. Xing, Mater. Res. Soc. Symp. Proc. MRSPDH 0272-9172 10.1557/PROC-310-165 310, 165 (1993).
17. Y. Kitanaka, Y. Noguchi, and M. Miyayama, Phys. Rev. B PRBMDO 1098-0121 10.1103/PhysRevB.81.094114 81, 094114 (2010).
18. Y. Noguchi, I. Miwa, Y. Goshima, and M. Miyayama, Jpn. J. Appl. Phys. JJAPA5 0021-4922 10.1143/JJAP.39.L1259 39, L1259 (2000).
19. Y. Noguchi, T. Matsumoto, and M. Miyayama, Jpn. J. Appl. Phys. JAPNDE 0021-4922 10.1143/JJAP.44.L570 44, L570 (2005). (Pubitemid 43078351)
20. M. Takahashi, Y. Noguchi, and M. Miyayama, Jpn. J. Appl. Phys. JAPNDE 0021-4922 10.1143/JJAP.41.7053 41, 7053 (2002). (Pubitemid 43225507)
21. S. E. Cummins and L. E. Cross, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1656542 39, 2268 (1968).
22. U. Chon, H. M. Jang, M. G. Kim, and C. H. Chang, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.89.087601 89, 087601 (2002).
23. T. Higuchi, Y. Noguchi, T. Goto, M. Miyayama, S. Shin, K. Kaneda, T. Hattori, and T. Tsukamotos, Jpn. J. Appl. Phys. JJAPA5 0021-4922 10.1143/JJAP.44.L1491 44, L1491 (2005). (Pubitemid 43186027)
24. T. Y. Kim, J. H. Lee, Y. J. Oh, M. R. Choi, and W. Jo, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2472181 90, 082901 (2007).
25. J. H. Lee, M. R. Choi, Y. J. Oh, and W. Jo, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2769945 91, 072906 (2007). (Pubitemid 47283585)
26. W. Jo, K. H. Kim, and T. W. Noh, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.113622 66, 3120 (1995).
27. F. Hou, M. Shen, and W. Cao, Thin Solid Films THSFAP 0040-6090 10.1016/j.tsf.2004.03.030 471, 35 (2005).
28. J. Ma, X. M. Lu, Y. Kan, J. Gu, and J. S. Zhu, J. Electroceram. JOELFJ 1385-3449 10.1007/s10832-007-9310-4 21, 837 (2008).
29. T. Watanabe and H. Funakubo, Jpn. J. Appl. Phys. JJAPA5 0021-4922 10.1143/JJAP.39.5211 39, 5211 (2000).
30. Y. Kitanaka, Y. Noguchi, and M. Miyayama, Phys. Rev. B PRBMDO 1098-0121 10.1103/PhysRevB.81.094114 81, 094114 (2010).
31. K. Yamamoto, Y. Kitanaka, M. Suzuki, M. Miyayama, Y. Noguchi, C. Moriyoshi, and Y. Kuroiwa, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2800822 91, 162909 (2007). (Pubitemid 350010701)
32. M. Alexe, A. Gruverman, C. Harnagea, N. D. Zakharov, A. Pignolet, D. Hesse, and J. F. Scott, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.124628 75, 1158 (1999).
33. A. Gruverman, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.124722 75, 1452 (1999).
34. J. A. Christman, S.-H. Kim, H. Maiwa, J.-P. Maria, B. J. Rodriguez, A. I. Kingon, and R. J. Nemanich, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.373492 87, 8031 (2000).
35. R. H. Shin, J. H. Lee, G. Kim, W. Jo, D. H. Kim, H. J. Lee, and J.Kang, Jpn. J. Appl. Phys. JJAPA5 0021-4922 10.1143/JJAP.49.091501 49, 091501 (2010).
36. T. Hashimoto and H. Moriwake, Phys. Rev. B PRBMDO 1098-0121 10.1103/PhysRevB.78.092106 78, 092106 (2008).
37. D. W. Lee, J. W. Seo, S. Cho, S. R. Park, C. Kim, B. J. Kim, S.-J. Oh, B. S. Kang, T. W. Noh, and B. H. Park, J. Appl. Phys 0021-8979 10.1063/1.2169881. 99, 034101 (2006).
38. S. B. Ren, C. J. Lu, J. S. Liu, H. M. Shen, and Y. N. Wang, Phys. Rev. B PRBMDO 1098-0121 10.1103/PhysRevB.54.R14337 54, R14337 (1996);
39. S. B. Ren, C. J. Lu, J. S. Liu, H. M. Shen, and Y. N. Wang, Phys. Rev. B 1098-0121 10.1103/PhysRevB.55.3485 55, 3485 (1997).
40. M. Nagata, D. P. Vijay, X. B. Zhang, and S. B. Desu, Phys. Status Solidi A PSSABA 0031-8965 10.1002/pssa.2211570110 157, 75 (1996).
41. D. Wu, A. Li, T. Zhu, Z. Liu, and N. Ming, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1322387 88, 5941 (2000).
42. B. Sih, A. Jung, and Z.-G. Ye, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1502206 92, 3928 (2002). (Pubitemid 35209177)
43. A. Gruverman, H. Tokumoto, A. S. Prakash, S. Aggarwal, B. Yang, M. Wuttig, R. Ramesh, O. Auciello, and T. Venkatesan, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.120369 71, 3492 (1997).
44. C. S. Ganpule, A. L. Roytburd, V. Nagarajan, B. K. Hill, S. B. Ogale, E. D. Williams, and R. Ramesh, and J. F. Scott, Phys. Rev. B PRBMDO 1098-0121 10.1103/PhysRevB.65.014101 65, 014101 (2001).
45. A. Gruverman and M. Tanaka, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1334938 89, 1836 (2001). (Pubitemid 33630011)
46. O. Auciello, A. Gruverman, H. Tokumoto, S. A. Prakash, S.Aggarwal, and R. Ramesh, MRS Bull. 23, 33 (1998).
47. C. A-Paz de Araujo, J. D. Cuchiaro, L. D. McMillan, M. C. Scott, and J. F. Scott, Nature 0028-0836 10.1038/374627a0 374, 627 (1995).
48. B. H. Park, B. S. Kang, S. D. Bu, T. W. Noh, J. Lee, and W. Jo, Nature 0028-0836 10.1038/44352 401, 682 (1999). (Pubitemid 29485209)
49. W. Jo, D. C. Kim, and J. W. Hong, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.125763 76, 390 (2000).
50. S. Katayama, Y. Noguchi, and M. Miyayama, Adv. Matter. 0935-9648 10.1002/adma.200602607 19, 2552 (2007). (Pubitemid 47485688)
51. J. C. Phillips, Rep. Prog. Phys. RPPHAG 0034-4885 10.1088/0034-4885/59/9/ 003 59, 1133 (1996).
52. C. S. Ganpule, V. Nagarajan, S. B. Ogale, A. L. Roytburd, E. D. Williams, and R. Ramesh, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1322051 77, 3275 (2000);
53. J. M. Benedetto, R. A. Moore, and F. B. McLean, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.355875 75, 460 (1994).
54. D. Viehland and Y.-H. Chen, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1325001 88, 6696 (2000).
55. D. J. Kim, J. Y. Jo, Y. S. Kim, Y. J. Chang, J. S. Lee, J. G. Yoon, T. K. Song, and T. W. Noh, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.95. 237602 95, 237602 (2005). (Pubitemid 41776942)
56. The nature of the physical quantities obtained by PFM is controversial at the present. It might be a mixture of mechanical response due to piezoelectricity and/or charge-charge interaction due to potential difference between the surface and the tip. In this text random changes of the PFM signals indicate that there might be something that is an itinerant carrier, mostly electrons or mobile ions. For simplicity of discussion we are using charged states rather than polarization for these samples.
57. U. Tracht, M. Wilhelm, A. Heuer, H. Feng, K. Schmidt-Rohr, and H. W. Spiess, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett.81.2727 81, 2727 (1998).
58. J. J. Torres, P. L. Garrido, and J. Marro, Phys. Rev. B PRBMDO 1098-0121 10.1103/PhysRevB.58.11488 58, 11488 (1998).
59. P. Phillips and H.-L. Wu, Science SCIEAS 0036-8075 10.1126/science.252. 5014.1805 252, 1805 (1991).
60. A. Lherbier, B. Biel, Y. M. Niquet, and S. Roche, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.100.036803 100, 036803 (2008). (Pubitemid 351161763)
61. V. B. Sapozhnikov and M. G. Goldiner, J. Phys. A: Math. Gen. 0305-4470 10.1088/0305-4470/23/22/019 23, 5309 (1990).
62. 12) and Nd would be substituted in Bi sites of perovskite structure.