Active doping of B in silicon nanostructures and development of a Si quantum dot solar cell

Nanotechnology

Volumn 22, Issue 42, 2011, Pages

  Hong, Seung Hui ^a   Kim, Yong Sung ^a   Lee, Woo ^a   Kim, Young Heon ^a   Song, Jae Yong ^a   Jang, Jong Shik ^a   Park, Jae Hee ^a,b   Choi, Suk Ho ^b   Kim, Kyung Joong ^a  

^a Korea Research Institute of Standards and Science   (South Korea)

^b Kyung Hee University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

A-SI QD; B ATOMS; BIMODAL DISTRIBUTION; BORON ATOM; DEPTH-PROFILING ANALYSIS; DOPING CONCENTRATION; HALL EFFECT MEASUREMENT; HIGH TEMPERATURE; NANOMETER SILICON; P-TYPE SI; SI ATOMS; SI LAYER; SI QUANTUM DOT; SILICON LAYER; SILICON NANOSTRUCTURES; SILICON QUANTUM DOTS; ULTRA-THIN;

ATOMS; BORON; CONVERSION EFFICIENCY; DEPTH PROFILING; GRAIN BOUNDARIES; HALL EFFECT; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM DOTS; SILICON COMPOUNDS; SILICON OXIDES; SOLAR ENERGY;

SILICON;

EID: 80053286498     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/22/42/425203     Document Type: Article

References (25)

1. Lu T Z, Alexe M, Scholz R, Talalaev V, Zhang R J and Zacharias M 2006 J. Appl. Phys. 100 014310
2. English D S, Pell L E, Yu Z, Barbara P F and Korgel B A 2002 Nano Lett. 2 681-5
3. Kim B-H, Cho C-H, Mun J-S, Kwon M-K, Park T-Y, Kim J S, Byeon C C and Park S-J 2008 Adv. Mater. 20 3100-4
4. Walters R J, Bourianoff G I and Atwater H A 2005 Nature Mater. 4 143-6
5. Cho E-C, Park S, Hao X, Song D, Conibeer G, Park S-C and Green M A 2008 Nanotechnology 19 245201
6. Conibeer G et al 2008 Thin Solid Films 516 6748-56
7. Ossicini S, Iori F, Degoli E, Luppi E, Margri R, Poli R, Cantele G, Trani F and Ninno D 2006 IEEE J. Quantum Electron. 12 1585-91
8. Pavesi L, Negro L D, Mazzoleni C, Franzo G and Priolo F 2000 Nature 408 440-4
9. Zacharias M, Heitmann J, Scholz R, Kahler U, Schmidt M and Blasing J 2002 Appl. Phys. Lett. 80 661-3
10. Kim S, Park Y M, Choi S-H and Kim K J 2007 J. Appl. Phys. 101 034306
11. Park N-M, Choi C-J, Seong T-Y and Park S-J 2001 Phys. Rev. Lett. 86 1355-7
12. Wang M, Li D, Yuan Z, Yang D and Que D 2007 Appl. Phys. Lett. 90 131903
13. Yang M-S, Cho K-S, Jhe J-H, Seo S-Y, Shin J H, Kim K J and Moon D W 2004 Appl. Phys. Lett. 85 3408-10
14. Björk M T, Schmid H, Knoch J, Riel H and Riess W 2009 Nature Nanotechnol. 4 103-7
15. Garnett E C, Tseng Y-C, Khanal D R, Wu J, Bokor J and Yang P D 2009 Nature Nanotechnol. 4 311-4
16. Chadi D J, Citrin P H, Park C H, Adler D L, Marcus M A and Gossmann H-J 1997 Phys. Rev. Lett. 79 4834-7
17. Fernndez-Serra M V, Adessi C and Blase X 2006 Phys. Rev. Lett. 96 166805
18. Kim Y-S and Chang K J 2005 Appl. Phys. Lett. 87 041903
19. Iori F and Ossicini S 2009 Physica E 41 939-46
20. Chen L-Y, Chen W-H and Hong F C-N 2005 Appl. Phys. Lett. 86 193506
21. Lu Z H, Lockwood D J and Baribeau J-M 1995 Nature 378 258
22. Wilson W L, Szajowski P F and Brus L E 1993 Science 262 1242-4
23. Stirling A P, Charlier J-C and Car R 2000 Phys. Rev. Lett. 85 2773-6
24. Gouye A, Berbezier I, Favre L, Aouassa M, Amiard G, Ronda A, Campidelli Y and Halimaoui A 2010 J. Appl. Phys. 108 013513
25. Khanal D R, Yim J W L, Walukieqicz W and Wu J 2007 Nano Lett. 7 1186-90