Segregation of nearest-neighbor donor-pair defects to SiSi O2 interfaces

Applied Physics Letters

Volumn 87, Issue 4, 2005, Pages

  Kim, Yong Sung ^a   Chang, K J ^b  

^a SAMSUNG Electronics   (South Korea)

^b Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER SATURATION; DONOR-PAIR DEFECTS; DOPANT SEGREGATION; DOPANTS;

COMPUTER AIDED DESIGN; COMPUTER SIMULATION; DOPING (ADDITIVES); FIELD EFFECT TRANSISTORS; SEGREGATION (METALLOGRAPHY); SILICA; SURFACE TENSION;

SILICON;

EID: 23744481911     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2001752     Document Type: Article

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