Insights into solid phase epitaxy of ultrahighly doped silicon

Journal of Applied Physics

Volumn 108, Issue 1, 2010, Pages

  Gouy A ^a,b   Berbezier, I ^a   Favre, L ^a   Aouassa, M ^a   Amiard, G ^a   Ronda, A ^a   Campidelli, Y ^b   Halimaoui, A ^b  

^a AIX MARSEILLE UNIVERSITÉ   (France)

^b STMICROELECTRONICS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS PHASE; B ATOMS; BORON ATOM; BORON CONCENTRATIONS; CHARGED DEFECTS; CHEMICAL VAPOR; CODEPOSITION; CONCENTRATION OF; CRYSTALLINE INTERFACES; CRYSTALLINE PHASE; CRYSTALLINE SILICONS; CRYSTALLIZATION RATES; DOPED SILICON; DOPING ATOMS; EXPERIMENTAL CONDITIONS; IN-SITU ANNEALING; INTERFACE ENERGY; LOW TEMPERATURES; SEGREGATION ENERGIES; SOLID PHASE EPITAXY; ULTRA-SMALL;

AMORPHOUS FILMS; ATOMS; BORON; CRYSTAL GROWTH; CRYSTALLINE MATERIALS; CRYSTALLIZATION; DOPING (ADDITIVES); FERMI LEVEL; FERMIONS; SEGREGATION (METALLOGRAPHY); SEMICONDUCTING SILICON COMPOUNDS;

AMORPHOUS SILICON;

EID: 77955221552     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3408556     Document Type: Article

References (33)

1. A. Mattoni and L. Colombo, Phys. Rev. B PRBMDO 0163-1829 69, 045204 (2004). 10.1103/PhysRevB.69.045204
2. R. Duffy, V. C. Venezia, A. Heringa, B. J. Pawlak, M. J. P. Hopstaken, G. C. J. Maas, Y. Tamminga, T. Dao, F. Roozeboom, and L. Pelaz, Appl. Phys. Lett. APPLAB 0003-6951 84, 4283 (2004). 10.1063/1.1751225
3. S. Solmi, E. Landi, and F. Baruffaldi, J. Appl. Phys. JAPIAU 0021-8979 68, 3250 (1990). 10.1063/1.346376
4. J. A. Roth, G. L. Olson, D. C. Jacobson, and J. M. Poate, Appl. Phys. Lett. APPLAB 0003-6951 57, 1340 (1990). 10.1063/1.103477
5. L. Csepregi, E. F. Kennedy, T. J. Gallagher, J. W. Mayer, and T. W. Sigmon, J. Appl. Phys. JAPIAU 0021-8979 48, 4234 (1977). 10.1063/1.323408 (Pubitemid 8557452)
6. C. Licoppe and Y. I. Nissim, J. Appl. Phys. JAPIAU 0021-8979 59, 432 (1986). 10.1063/1.336649 (Pubitemid 17615420)
7. A. Lietoila, A. Wakita, T. W. Sigmon, and J. F. Gibbons, J. Appl. Phys. JAPIAU 0021-8979 53, 4399 (1982). 10.1063/1.331222 (Pubitemid 12532655)
8. L. Csepregi, E. F. Kennedy, J. W. Mayer, and T. W. Sigmon, J. Appl. Phys. JAPIAU 0021-8979 49, 3906 (1978). 10.1063/1.325397 (Pubitemid 8635282)
9. N. Bernstein, M. J. Aziz, and E. Kaxiras, Phys. Rev. B PRBMDO 0163-1829 61, 6696 (2000). 10.1103/PhysRevB.61.6696
10. G. Q. Lu, E. Nygren, and M. J. Aziz, J. Appl. Phys. JAPIAU 0021-8979 70, 5323 (1991). 10.1063/1.350243
11. J. C. McCallum, Nucl. Instrum. Methods Phys. Res. B NIMBEU 0168-583X 148, 350 (1999). 10.1016/S0168-583X(98)00671-5
12. A. C. Y. Liu, J. C. McCallum, and P. N. K. Deenapanray, Nucl. Instrum. Methods Phys. Res. B NIMBEU 0168-583X 190, 777 (2002). 10.1016/S0168-583X(01) 01178-8 (Pubitemid 34440938)
13. R. M. Walser and Y. J. Jeon, Mater. Res. Soc. Symp. Proc. MRSPDH 0272-9172 205, 27 (1992).
14. B. C. Johnson and J. C. McCallum, Phys. Rev. B PRBMDO 0163-1829 76, 045216 (2007). 10.1103/PhysRevB.76.045216
15. J. A. Roth and G. L. Olson, Handbook of Crystal Growth, 3rd ed. (Elsevier, Amsterdam, 1994), Vol. 3.
16. E. F. Kennedy, L. Csepregi, J. W. Mayer, and T. W. Sigmon, J. Appl. Phys. JAPIAU 0021-8979 48, 4241 (1977). 10.1063/1.323409 (Pubitemid 8557453)
17. B. C. Johnson and J. C. McCallum, J. Appl. Phys. JAPIAU 0021-8979 95, 4427 (2004). 10.1063/1.1682672
18. I. Suni, G. Goltz, and M. -A. Nicolet, Thin Solid Films THSFAP 0040-6090 93, 171 (1982). 10.1016/0040-6090(82)90102-X
19. J. S. Custer, A. Battaglia, M. Saggio, and F. Priolo, Phys. Rev. Lett. PRLTAO 0031-9007 69, 780 (1992). 10.1103/PhysRevLett.69.780
20. T. Saito and I. Ohdomari, Philos. Mag. B PMABDJ 1364-2812 49, 471 (1984). 10.1080/13642818408227655
21. K. N. Tu, Appl. Phys. A: Mater. Sci. Process. APAMFC 0947-8396 53, 32 (1991). 10.1007/BF00323431
22. M. Bauer, M. Oehme, M. Sauter, G. Eifler, and E. Kasper, Thin Solid Films THSFAP 0040-6090 364, 228 (2000). 10.1016/S0040-6090(99)00934-7 (Pubitemid 30586932)
23. S. Gupta, G. Morell, and B. R. Weiner, J. Non-Cryst. Solids JNCSBJ 0022-3093 343, 131 (2004). 10.1016/j.jnoncrysol.2004.07.008
24. A. Gouý, O. Kermarrec, A. Halimaoui, Y. Campidelli, D. Rouchon, M. Burdin, P. Holliger, and D. Bensahel, J. Cryst. Growth JCRGAE 0022-0248 311, 3522 (2009). 10.1016/j.jcrysgro.2009.04.011
25. G. Glass, H. Kim, P. Desjardins, N. Taylor, T. Spila, Q. Lu, and J. E. Greene, Phys. Rev. B PRBMDO 0163-1829 61, 7628 (2000). 10.1103/PhysRevB.61.7628
26. H. Kim, G. Glass, T. Spila, N. Taylor, S. Y. Park, J. R. Abelson, and J. E. Greene, J. Appl. Phys. JAPIAU 0021-8979 82, 2288 (1997). 10.1063/1.366036
27. I. Berbezier, B. Gallas, J. Fernandez, and B. Joyce, Semicond. Sci. Technol. SSTEET 0268-1242 14, 198 (1999). 10.1088/0268-1242/14/2/015
28. A. Portavoce, P. Gas, I. Berbezier, A. Ronda, J. S. Christensen, and B. Svensson, J. Appl. Phys. JAPIAU 0021-8979 96, 3158 (2004). 10.1063/1.1781767
29. A. Gouý, I. Berbezier, L. Favre, G. Amiard, M. Aouassa, Y. Campidelli, and A. Halimaoui, Appl. Phys. Lett. APPLAB 0003-6951 96, 063102 (2010). 10.1063/1.3298354
30. T. Motooka, K. Nisihira, S. Munetoh, K. Moriguchi, and A. Shintani, Phys. Rev. B PRBMDO 0163-1829 61, 8537 (2000). 10.1103/PhysRevB.61.8537
31. W. Barvosa-Carter, M. J. Aziz, A. V. Phan, T. Kaplan, and L. J. Gray, J. Appl. Phys. JAPIAU 0021-8979 96, 5462 (2004). 10.1063/1.1790580
32. J. S. Williams and R. G. Elliman, Phys. Rev. Lett. PRLTAO 0031-9007 51, 1069 (1983). 10.1103/PhysRevLett.51.1069
33. J. Y. Jin, J. Liu, U. Jeong, S. Mehta, and K. Jones, J. Vac. Sci. Technol. B JVTBD9 1071-1023 20, 422 (2002). 10.1116/1.1424279 (Pubitemid 34221451)