-
2
-
-
0001048111
-
Influence of Al content on formation of InAlGaAs quantum dots grown by molecular beam epitaxy
-
Baklenov O, Huffaker D L, Anselm A, Deppe D G and Streetman B G 1997 Influence of Al content on formation of InAlGaAs quantum dots grown by molecular beam epitaxy J. Appl. Phys. 82 6362
-
(1997)
J. Appl. Phys.
, vol.82
, Issue.12
, pp. 6362
-
-
Baklenov, O.1
Huffaker, D.L.2
Anselm, A.3
Deppe, D.G.4
Streetman, B.G.5
-
3
-
-
38049005913
-
Tailoring of morphology and emission wavelength of AlGaInAs quantum dots
-
Schlereth T W, Schneider C, Hofling S and Forchel A 2008 Tailoring of morphology and emission wavelength of AlGaInAs quantum dots Nanotechnology 19 045601
-
(2008)
Nanotechnology
, vol.19
, Issue.4
, pp. 045601
-
-
Schlereth, T.W.1
Schneider, C.2
Hofling, S.3
Forchel, A.4
-
4
-
-
77955224020
-
Recent progress in lasers on silicon
-
Liang D and Bowers J E 2010 Recent progress in lasers on silicon Nature Photon. 4 511
-
(2010)
Nature Photon.
, vol.4
, Issue.8
, pp. 511
-
-
Liang, D.1
Bowers, J.E.2
-
5
-
-
41449111600
-
Self-assembled InGaN quantum dots on GaN emitting at 520nm grown by metal-organic vapor-phase epitaxy
-
Ee Y K, Zhao H P, Arif R A, Jamil M and Tansu N 2008 Self-assembled InGaN quantum dots on GaN emitting at 520nm grown by metal-organic vapor-phase epitaxy J. Cryst. Growth 310 2320
-
(2008)
J. Cryst. Growth
, vol.310
, Issue.7-9
, pp. 2320
-
-
Ee, Y.K.1
Zhao, H.P.2
Arif, R.A.3
Jamil, M.4
Tansu, N.5
-
6
-
-
84255167245
-
Selective area epitaxy of ultra-high density InGaN quantum dots by diblock copolymer lithography
-
Liu G Y, Zhao H P, Zhang J, Park J H, Mawst L J and Tansu N 2011 Selective area epitaxy of ultra-high density InGaN quantum dots by diblock copolymer lithography Nanoscale Res. Lett. 6 342
-
(2011)
Nanoscale Res. Lett.
, vol.6
, Issue.1
, pp. 342
-
-
Liu, G.Y.1
Zhao, H.P.2
Zhang, J.3
Park, J.H.4
Mawst, L.J.5
Tansu, N.6
-
7
-
-
79954427067
-
Green gap spectral range light-emitting diodes with self-assembled InGaN quantum dots formed by enhanced phase separation
-
Park I K and Park S J 2011 Green gap spectral range light-emitting diodes with self-assembled InGaN quantum dots formed by enhanced phase separation Appl. Phys. Express 4 042102
-
(2011)
Appl. Phys. Express
, vol.4
, Issue.4
, pp. 042102
-
-
Park, I.K.1
Park, S.J.2
-
8
-
-
79958806254
-
A InGaN/GaN quantum dot green (λ = 524 nm) laser
-
Zhang M, Banerjee A, Lee C S, Hinckley J M and Bhattacharya P 2011 A InGaN/GaN quantum dot green (λ = 524 nm) laser Appl. Phys. Lett. 98 221104
-
(2011)
Appl. Phys. Lett.
, vol.98
, Issue.22
, pp. 221104
-
-
Zhang, M.1
Banerjee, A.2
Lee, C.S.3
Hinckley, J.M.4
Bhattacharya, P.5
-
9
-
-
79955719609
-
Built-in field control in alloyed c-plane III-N quantum dots and wells
-
Caro M A, Schulz S, Healy S B and O'Reilly E P 2011 Built-in field control in alloyed c-plane III-N quantum dots and wells J. Appl. Phys. 109 084110
-
(2011)
J. Appl. Phys.
, vol.109
, Issue.8
, pp. 084110
-
-
Caro, M.A.1
Schulz, S.2
Healy, S.B.3
O'Reilly, E.P.4
-
10
-
-
79959907003
-
Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells
-
Zhao H, Liu G, Zhang J, Poplawsky J D, Dierolf V and Tansu N 2011 Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells Opt. Express 19 A991
-
(2011)
Opt. Express
, vol.19
, Issue.S4
, pp. 991
-
-
Zhao, H.1
Liu, G.2
Zhang, J.3
Poplawsky, J.D.4
Dierolf, V.5
Tansu, N.6
-
11
-
-
77957689900
-
Analysis of InGaN-delta-InN quantum wells for light-emitting diodes
-
Zhao H P, Liu G Y and Tansu N 2010 Analysis of InGaN-delta-InN quantum wells for light-emitting diodes Appl. Phys. Lett. 97 131114
-
(2010)
Appl. Phys. Lett.
, vol.97
, Issue.13
, pp. 131114
-
-
Zhao, H.P.1
Liu, G.Y.2
Tansu, N.3
-
12
-
-
70349306516
-
Metal-organic vapor phase epitaxy of III-nitride light-emitting diodes on nanopatterned AGOG sapphire substrate by abbreviated growth mode
-
Ee Y K, Biser J M, Cao W J, Chan H M, Vinci R P and Tansu N 2009 Metal-organic vapor phase epitaxy of III-nitride light-emitting diodes on nanopatterned AGOG sapphire substrate by abbreviated growth mode IEEE J. Sel. Top. Quant. Electron. 15 1066
-
(2009)
IEEE J. Sel. Top. Quant. Electron.
, vol.15
, Issue.4
, pp. 1066
-
-
Ee, Y.K.1
Biser, J.M.2
Cao, W.J.3
Chan, H.M.4
Vinci, R.P.5
Tansu, N.6
-
13
-
-
79954601399
-
Defect-reduced green GaInN/GaN light-emitting diode on nanopatterned sapphire
-
Li Y F, You S, Zhu M W, Zhao L, Hou W T, Detchprohm T, Taniguchi Y, Tamura N, Tanaka S and Wetzel C 2011 Defect-reduced green GaInN/GaN light-emitting diode on nanopatterned sapphire Appl. Phys. Lett. 98 131114
-
(2011)
Appl. Phys. Lett.
, vol.98
, pp. 131114
-
-
Li, Y.F.1
You, S.2
Zhu, M.W.3
Zhao, L.4
Hou, W.T.5
Detchprohm, T.6
Taniguchi, Y.7
Tamura, N.8
Tanaka, S.9
Wetzel, C.10
-
15
-
-
0035831880
-
Radiative recombination from InP quantum dots on (100) GaP
-
DOI 10.1063/1.1361277
-
Hatami F, Masselink W T and Schrottke L 2001 Radiative recombination from InP quantum dots on (100) GaP Appl. Phys. Lett. 78 2163 (Pubitemid 32396190)
-
(2001)
Applied Physics Letters
, vol.78
, Issue.15
, pp. 2163
-
-
Hatami, F.1
Masselink, W.T.2
Schrottke, L.3
-
18
-
-
0037304688
-
InP quantum dots embedded in GaP: Optical properties and carrier dynamics
-
Hatami F, Masselink W T, Schrottke L, Tomm J W, Talalaev V, Kristukat C and Goni A R 2003 InP quantum dots embedded in GaP: optical properties and carrier dynamics Phys. Rev. B 67 085306
-
(2003)
Phys. Rev.
, vol.67
, Issue.8
, pp. 085306
-
-
Hatami, F.1
Masselink, W.T.2
Schrottke, L.3
Tomm, J.W.4
Talalaev, V.5
Kristukat, C.6
Goni, A.R.7
-
19
-
-
0031268856
-
Indirect transitions, free and impurity-bound excitons in gallium phosphide: A revisit with modulation and photoluminescence spectroscopy
-
Alawadhi H, Vogelgesang R, Ramdas A K, Chin T P and Woodall J M 1997 Indirect transitions, free and impurity-bound excitons in gallium phosphide: a revisit with modulation and photoluminescence spectroscopy J. Appl. Phys. 82 4331
-
(1997)
J. Appl. Phys.
, vol.82
, Issue.9
, pp. 4331
-
-
Alawadhi, H.1
Vogelgesang, R.2
Ramdas, A.K.3
Chin, T.P.4
Woodall, J.M.5
-
20
-
-
0001194497
-
Prediction of a strain-induced conduction-band minimum in embedded quantum dots
-
Williamson A J, Zunger A and Canning A 1998 Prediction of a strain-induced conduction-band minimum in embedded quantum dots Phys. Rev. B 57 R4253
-
(1998)
Phys. Rev.
, vol.57
, Issue.8
, pp. 4253
-
-
Williamson, A.J.1
Zunger, A.2
Canning, A.3
-
21
-
-
70350052846
-
Evidence of type-I direct recombination in InP/GaP quantum dots via magnetoluminescence
-
von Dewitz C, Hatami F, Millot M, Broto J M, Leotin J and Masselink W T 2009 Evidence of type-I direct recombination in InP/GaP quantum dots via magnetoluminescence Appl. Phys. Lett. 95 151105
-
(2009)
Appl. Phys. Lett.
, vol.95
, Issue.15
, pp. 151105
-
-
Von Dewitz, C.1
Hatami, F.2
Millot, M.3
Broto, J.M.4
Leotin, J.5
Masselink, W.T.6
-
22
-
-
0037441230
-
Electronic structure of self-assembled InP/GaP quantum dots from high-pressure photoluminescence
-
Goni A R, Kristukat C, Hatami F, Dressler S, Masselink W T and Thomsen C 2003 Electronic structure of self-assembled InP/GaP quantum dots from high-pressure photoluminescence Phys. Rev. B 67 075306
-
(2003)
Phys. Rev.
, vol.67
, Issue.7
, pp. 075306
-
-
Goni, A.R.1
Kristukat, C.2
Hatami, F.3
Dressler, S.4
Masselink, W.T.5
Thomsen, C.6
-
23
-
-
41349092986
-
Nextnano: General purpose 3-D simulations
-
Birner S, Zibold T, Andlauer T, Kubis T, Sabathil M, Trellakis A and Vogl P 2007 Nextnano: general purpose 3-D simulations IEEE Trans. Electron Devices 54 2137
-
(2007)
IEEE Trans. Electron Devices
, vol.54
, Issue.9
, pp. 2137
-
-
Birner, S.1
Zibold, T.2
Andlauer, T.3
Kubis, T.4
Sabathil, M.5
Trellakis, A.6
Vogl, P.7
-
24
-
-
0035356466
-
Band parameters for III-V compound semiconductors and their alloys
-
DOI 10.1063/1.1368156
-
Vurgaftman I, Meyer J R and Ram-Mohan L R 2001 Band parameters for III-V compound semiconductors and their alloys J. Appl. Phys. 89 5815 (Pubitemid 32886908)
-
(2001)
Journal of Applied Physics
, vol.89
, Issue.11
, pp. 5815
-
-
Vurgaftman, I.1
Meyer, J.R.2
Ram-Mohan, L.R.3
-
25
-
-
0000571978
-
Carrier dynamics in type-II GaSb/GaAs quantum dots
-
Hatami F et al 1998 Carrier dynamics in type-II GaSb/GaAs quantum dots Phys. Rev. B 57 4635
-
(1998)
Phys. Rev.
, vol.57
, Issue.8
, pp. 4635
-
-
Hatami, F.1
-
26
-
-
0030103965
-
Optical investigations of the dynamic behavior of GaSb/GaAs quantum dots
-
Sun C K, Wang G, Bowers J E, Brar B, Blank H R, Kroemer H and Pilkuhn M H 1996 Optical investigations of the dynamic behavior of GaSb/GaAs quantum dots Appl. Phys. Lett. 68 1543
-
(1996)
Appl. Phys. Lett.
, vol.68
, Issue.11
, pp. 1543
-
-
Sun, C.K.1
Wang, G.2
Bowers, J.E.3
Brar, B.4
Blank, H.R.5
Kroemer, H.6
Pilkuhn, M.H.7
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