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Electronic Materials Letters

Volumn 4, Issue 1, 2008, Pages 29-33

Resistive switching properties of Pt/TiO2/n+-Si ReRAM for nonvolatile memory application

(4) Won, Sanghee a Go, Seunghee a Lee, Kwanwoo a Lee, Jaegab a

a Kookmin University (South Korea)

Author keywords

Memory effects; Resistive switching; TiO2

Indexed keywords

EID: 57049136662 PISSN: 17388090 EISSN: None Source Type: Journal
DOI: None Document Type: Article

Times cited : (22)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.