Highly uniform bipolar resistive switching with Al2}O 3 buffer layer in robust NbAlO-based RRAM

IEEE Electron Device Letters

Volumn 31, Issue 4, 2010, Pages 356-358

  Chen, Lin ^a   Xu, Yan ^a   Sun, Qing Qing ^a   Liu, Han ^a   Gu, Jing Jing ^a   Ding, Shi Jin ^a   Zhang, David Wei ^a  

^a FUDAN UNIVERSITY   (China)

Author keywords

Atomic layer deposition; Conductive filament; NbAlO; Resistive switching

Indexed keywords

ATOMIC LAYER DEPOSITED; CONDUCTIVE FILAMENTS; FUTURE MEMORY; HIGH-RESISTANCE STATE; LOW-RESISTANCE STATE; MEMORY SWITCHING; NBALO; NON-VOLATILE MEMORY APPLICATION; RESISTANCE RATIO; RESISTANCE SWITCHING; RESISTIVE SWITCHING; RETENTION LIFETIME; ROOM TEMPERATURE;

ALUMINUM; ATOMS; BUFFER LAYERS; FILAMENTS (LAMP); SWITCHING SYSTEMS;

SWITCHING;

EID: 77950086911     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2041183     Document Type: Article

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