Influence of band-gap opening on ballistic electron transport in bilayer graphene and graphene nanoribbon FETs

IEEE Transactions on Electron Devices

Volumn 58, Issue 10, 2011, Pages 3300-3306

  Sako, Ryutaro ^a   Tsuchiya, Hideaki ^a   Ogawa, Matsuto ^a  

^a KOBE UNIVERSITY   (Japan)

Author keywords

Ballistic transport; band gap opening; bilayer graphene (BLGs); field effect transistors (FET); graphene nanoribbons (GNRs); mexican hat structure

Indexed keywords

BALLISTIC TRANSPORTS; BAND GAPS; BI-LAYER; FIELD-EFFECT TRANSISTORS (FET); GRAPHENE NANORIBBONS (GNRS); MEXICAN HAT STRUCTURE;

BALLISTICS; ELECTRIC FIELDS; ELECTRON TRANSITIONS; ELECTRON TRANSPORT PROPERTIES; MESFET DEVICES; QUANTUM CHEMISTRY; SPECTROSCOPY;

GRAPHENE;

EID: 80053188769     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2011.2161992     Document Type: Article

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