SCOPUS 정보 검색 플랫폼

Japanese Journal of Applied Physics

Volumn 49, Issue 11, 2010, Pages

Performance comparisons of bilayer graphene and graphene nanoribbon field-effect transistors under ballistic transport

(4) Hosokawa, Hiroshi a Sako, Ryutaro a Ando, Haruki a Tsuchiya, Hideaki a

a KOBE UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BALLISTIC TRANSPORTS; BAND GAPS; BI-LAYER; CHANNEL MATERIALS; DEVICE PERFORMANCE; DIGITAL SWITCH; FIRST-PRINCIPLES APPROACHES; GRAPHENE NANO-RIBBON; HIGH-SPEED; INP; METAL OXIDE SEMICONDUCTOR; N-CHANNEL; PERFORMANCE COMPARISON; PERFORMANCE POTENTIALS; SIMULATION STUDIES; UPPER LIMITS;

BALLISTICS; DIGITAL CIRCUITS; FIELD EFFECT TRANSISTORS; GRAPHENE; LOGIC CIRCUITS; MESFET DEVICES; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SWITCHING CIRCUITS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 79551620613 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.49.110207 Document Type: Article

Times cited : (12)

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