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Volumn 28, Issue 2, 2005, Pages 337-344

The evaluation of copper migration during the die attach curing and second wire bonding process

Author keywords

Atomic force microscopy (AFM); Design of experiment (DOE); Nonstick on lead (NSOL); Transmission electron microscopy (TEM); X ray photoelectron spectroscopy (XPS)

Indexed keywords

ATOMIC FORCE MICROSCOPY; BONDING; CURING; HEAT TREATMENT; INTEGRATED CIRCUIT MANUFACTURE; LEAD; OPTIMIZATION; SILVER; SURFACE PHENOMENA; TRANSMISSION ELECTRON MICROSCOPY; WIRE; X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 21044449767     PISSN: 15213331     EISSN: None     Source Type: Journal    
DOI: 10.1109/TCAPT.2005.848494     Document Type: Article
Times cited : (16)

References (12)
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  • 2
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    • "Surface topographical characteristics of silver-plated film on the wedge bondability of leaded IC packages"
    • May
    • T. Y. Lin, K. L. Davison, W. S. Leong, S. Chua, Y. F. Yao, J. S. Pan, J. W. Chai, K. C. Toh, and W. C. Tjiu Chai, "Surface topographical characteristics of silver-plated film on the wedge bondability of leaded IC packages," Microelectron. Rel., vol. 43, no. 5, pp. 803-809, May 2003.
    • (2003) Microelectron. Rel. , vol.43 , Issue.5 , pp. 803-809
    • Lin, T.Y.1    Davison, K.L.2    Leong, W.S.3    Chua, S.4    Yao, Y.F.5    Pan, J.S.6    Chai, J.W.7    Toh, K.C.8    Tjiu Chai, W.C.9
  • 6
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    • (2000) Microelectron. Rel. , vol.40 , Issue.7 , pp. 1199-1206
    • Chong, Y.F.1    Gopalakrishnan, R.2    Tsang, C.F.3    Sarkar, G.4    Lim, S.5    Tatti, S.6
  • 8
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    • "Reliability effects of fluorine contamination of aluminum bonding pads on semiconductor chips"
    • G. F. Graves and W. Gurany, "Reliability effects of fluorine contamination of aluminum bonding pads on semiconductor chips," Solid State Technol., vol. 26, no. 10, pp. 227-232, 1983.
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    • Graves, G.F.1    Gurany, W.2
  • 10
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    • Dec
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  • 11
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    • "XPS study of incident angle effects on ion-beam modification of InP surfaces by 6 keV O2+"
    • J. S. Pan, S. T. Tay, C. H. A. Huan, and A. T. S. Wee, "XPS study of incident angle effects on ion-beam modification of InP surfaces by 6 keV O2+," Surface Interface Anal., vol. 27, no. 11, pp. 993-997, 1999.
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  • 12
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    • "AES and XPS analysis of angle of incidence effects of ion-beam-induced nitridation of GaAs"
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.