Correlations between microstructure and Q-factor of tunable thin film bulk acoustic wave resonators

Journal of Applied Physics

Volumn 110, Issue 5, 2011, Pages

  Vorobiev, A ^a   Gevorgian, S ^a   Loffler M ^a   Olsson, E ^a  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ACOUSTIC ATTENUATION; ACOUSTIC LOSS; AMORPHOUS LAYER; FILM INTERFACES; GRAIN SIZE; LOCALIZED DEFECTS; LOSS MECHANISMS; Q-FACTORS; TEST STRUCTURE; THICKNESS VARIATION; THIN-FILM BULK ACOUSTIC WAVE RESONATOR; TIO; TUNABLE THIN FILMS;

ACOUSTIC RESONATORS; ACOUSTIC WAVES; ACOUSTICS; BARIUM; FILM GROWTH; GRAIN GROWTH; GROWTH TEMPERATURE; INTERFACES (MATERIALS); MICROSTRUCTURE; Q FACTOR MEASUREMENT; RESONATORS; SHEAR FLOW; SURFACE DEFECTS; SURFACE ROUGHNESS; THIN FILMS; WAVE FILTERS;

ACOUSTIC WAVE SCATTERING;

EID: 80052950361     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3626939     Document Type: Conference Paper

References (39)

1. J. Berge, M. Norling, A. Vorobiev, and S. Gevorgian, J. Appl. Phys. 103, 064508 (2008). 10.1063/1.2896585
2. A. Noeth, T. Yamada, P. Muralt, A. K. Tagantsev, and N. Setter, IEEE Trans. Ultrason. Ferroelectr. Freq. Control 57, 379 (2010). 10.1109/TUFFC.2010. 1417
3. G. N. Saddik, D. S. Boesch, S. Stemmer, and R. York, IEEE MTT-S Int. Microwave Symp. Dig. 1, 1263 (2008).
4. X. Zhu, J. D. Phillips, and A. Mortazawi, IEEE MTT-S Int. Microwave Symp. Dig. 1, 671 (2007).
5. K.-Y. Hashimoto, RF Bulk Acoustic Wave Filters for Communications (Artech House, Norwood, MA, 2009).
6. R. Nava, R. Callarotti, H. Ceva, and A. Martinet, Phys. Rev. 188, 1456 (1969). 10.1103/PhysRev.188.1456
7. J. F. Rosenbaum, Bulk Acoustic Wave Theory and Devices (Artech House, Norwood, MA, 1988).
8. A. Volatier, E. Defay, M. Aid, A. N ′hari, P. Ancey, and B. Dubus, Appl. Phys. Lett. 92, 032906 (2008). 10.1063/1.2837616
9. R. E. Green, Ultrasonic Investigation of Mechanical Properties (Academic, New York, 1973).
10. J. Berge, A. Vorobiev, W. Steichen, and S. Gevorgian, IEEE Microw. Wirel. Compon. Lett. 17, 655 (2007). 10.1109/LMWC.2007.903445
11. R. Thalhammer, J. Kaitila, R. Aigner, and S. Marksteiner, Proc.-IEEE Ultrason. Symp. 1, 282 (2004).
12. J. Kaitila, IEEE Ultrason. Symp. Dig. 1, 120 (2007).
13. S. Marksteiner, J. Kaitila, G. G. Fattinger, R. Aigner, Proc.-IEEE Ultrason. Symp. 1, 329 (2005).
14. F. Martin, M.-E. Jan, B. Belgacem, M.-A. Dubois, and P. Muralt, Thin Solid Films 514, 341 (2006). 10.1016/j.tsf.2006.03.005
15. J. Bjurstrm, G. Wingqvist, and I. Katardjiev, IEEE Ultrason. Symp. Dig. 1, 321 (2005). 10.1109/ULTSYM.2005.1602859
16. A. Vorobiev and S. Gevorgian, Appl. Phys. Lett. 96, 212904 (2010). 10.1063/1.3441413
17. M. Norling, J. Berge, and S. Gevorgian, IEEE MTT-S Int. Microwave Symp. Dig. 1, 101 (2009).
18. A. Vorobiev and S. Gevorgian, paper presented at MEMSWAVE 2010, Otranto, Italy, 28-30 June 2010.
19. A. K. Tagantsev, V. O. Sherman, K. F. Astafiev, J. Venkatesh, and N. Setter, J. Electroceramics 11, 5 (2003). 10.1023/B:JECR.0000015661.81386.e6
20. K. Bethe, Philips Res. Rep. (Suppl 2) 2, 73 (1970).
21. Z. Ma, A. J. Becker, P. Polakos, H. Huggins, J. Pastalan, H. Wu, Y. H. Wong, and P. Mankiewich, IEEE Trans. on Electron Devices 45, 1811 (1998). 10.1109/16.661229
22. D.-H. Kim, M. Yim, D. Chai, J.-S. Park, and G. Yoon, Jpn. J. Appl. Phys. 43, 1545 (2004). 10.1143/JJAP.43.1545
23. K. Kuribayashi and S. Kitamura, Thin Solid Films 400, 160 (2001). 10.1016/S0040-6090(01)01503-6
24. P. G. Klemens, Proc. Phys. Soc., London, Sect. A 68, 1113 (1955). 10.1088/0370-1298/68/12/303
25. M. Aspelmeyer, U. Klemradt, W. Hartner, H. Bachhofer, and G. Schindler, J. Phys. D: Appl. Phys. 34, A173 (2001). 10.1088/0022-3727/34/10A/336
26. O. G. Vendik, E. K. Hollmann, A. B. Kozyrev, and A. M. Prudan, J. Supercond. 12, 325 (1999). 10.1023/A:1007797131173
27. O. G. Vendik and S. P. Zubko, J. Appl. Phys. 88, 5343 (2000). 10.1063/1.1317243
28. O. G. Vendik and L. T. Ter-Martirosyan, J. Appl. Phys. 87, 1435 (2000). 10.1063/1.372031
29. S. Saha and S. B. Krupanidhi, Appl. Phys. Lett. 79, 111 (2001). 10.1063/1.1371791
30. M. S. Tsai and T. Y. Tseng, Mater. Chem. Phys. 57, 47 (1998). 10.1016/S0254-0584(98)00199-0
31. N. M. Alford, P. K. Petrov, A. G. Gagarin, A. B. Kozyrev, A. I. Sokolov, O. I. Soldatenkov, and V. A. Volpyas, Appl. Phys. Lett. 87, 222904 (2005). 10.1063/1.2137466
32. Yu. A. Boikov, B. M. Goltsman, V. K. Yarmarkin, and V. V. Lemanov, Appl. Phys. Lett. 78, 3866 (2001). 10.1063/1.1379062
33. D. Muller-Sajak, A. Cosceev, C. Brand, K. R. Hofmann, and H. Pfnur, Phys. Status Solidi C 7, 316 (2010). 10.1002/pssc.200982477
34. W. G. Lee, S. I. Woo, J. C. Kim, S. H. Choi, and K. H. Oh, Thin Solid Films 237, 105 (1994). 10.1016/0040-6090(94)90245-3
35. W. Schirmacher, G. Diezemann, and C. Ganter, Phys. Rev. Lett. 81, 136 (1998). 10.1103/PhysRevLett.81.136
36. T. S. Grigera, V. Martin-Mayor, G. Parisi, and P. Verrocchio, Phys. Rev. Lett. 87, 085502 (2001). 10.1103/PhysRevLett.87.085502
37. G. F. Iriarte, F. Engelmark, and I. V. Katardjiev, J. Mater. Res. 17, 1469 (2002). 10.1557/JMR.2002.0218
38. S. N. Ivanov and Ye. N. Khazanov, Radio Eng. Electron. 26, 133 (1981).
39. R. O. Bell and G. Rupprecht, Phys. Rev. 129, 90 (1963). 10.1103/PhysRev.129.90