Preparation and electrical characterization of amorphous BaO, SrO and Ba0.7Sr0.3O as high-k gate dielectrics

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 7, Issue 2, 2010, Pages 316-320

  Muller Sajak D ^a   Cosceev, A ^a   Brand, C ^a   Hofmann, K R ^a   Pfnur H ^a  

^a LEIBNIZ UNIVERSITY HANNOVER   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BAND OFFSETS; BULK VALUE; ELECTRICAL CHARACTERIZATION; GATE OXIDE; HIGH-K GATE DIELECTRICS; HIGH-K MATERIALS; INTERFACE DEFECTS; ORDER OF MAGNITUDE; OXIDE THICKNESS; RELATIVE DIELECTRIC CONSTANT; ROOM TEMPERATURE; SI(0 0 1); STRUCTURAL INTERFACE; TRAP DENSITY;

BARIUM; CHARACTERIZATION; DIELECTRIC MATERIALS; GATES (TRANSISTOR); NANOSCIENCE; OXIDE FILMS; ULTRATHIN FILMS;

GATE DIELECTRICS;

EID: 77954321985     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200982477     Document Type: Conference Paper

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