Improved resonance characteristics by thermal annealing of W/SiO 2 multi-layers in film bulk acoustic wave resonator devices

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 4 A, 2004, Pages 1545-1550

  Kim, Dong Hyun ^a   Yim, Munhyuk ^a   Chai, Dongkyu ^a   Park, Jin Seok ^b   Yoon, Giwan ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Hanyang University   (South Korea)

Author keywords

FBAR devices; Q factor; Resonance characteristics; Return loss; ZnO

Indexed keywords

ACOUSTIC WAVES; ANNEALING; MAGNETRON SPUTTERING; RESONANCE; RESONATORS; SILICON;

FBAR DEVICES; Q-FACTOR; RESONANCE CHARACTERISTICS; RETURN LOSS; ZNO;

MULTILAYERS;

EID: 3042817159     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.1545     Document Type: Article

References (9)

1. K. M. Lakin, G. R. Kline and K. T. McCarron: IEEE Trans. Microwave Theory Tech. 43 (1995) 2933.
2. R. C. Ruby, P. Bradley (SM), Y. Oshmyansky and A. Chien: IEEE Ultrason. Symp. 1 (2001) 813.
3. S.-H. Park, B.-C. Seo, H.-D. Park and G. Yoon: Jpn. J. Appl. Phys. 39 (2000) 4115.
4. R. Ruby, P. Bradley, J. D. Larson, III and Y. Oshmyansky: Electron. Lett. 35 (1999) 794.
5. K. M. Lakin, K. T. McCarron and R. E. Rose: IEEE Ultrason. Symp. 2 (1995) 905.
6. W. E. Newell: Proc. IEEE 53 (1965) 575.
7. K. M. Lakin, K. T. McCarron and J. F. McDonald: Proc. IEEE Ultrason. Symp. 1 (2000) 855.
8. S. L. Pinkett and W. D. Hunt: Proc. IEEE Ultrason. Symp. 1 (2001) 823.
9. K. M. Lakin, G. R. Kline and K. T. McCarron: IEEE Trans. Microwave Theory Tech. 41 (1993) 2139.