Tunable Thin Film Bulk Acoustic Wave Resonator Based on BaxSr1−xTiO3 Thin Film

IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control

Volumn 57, Issue 2, 2010, Pages 379-385

  Noeth, Andreas ^a   Muralt, Paul ^a   Tagantsev, Alexander K ^a   Setter, Nava ^a   Yamada, Tomoaki ^b  

^a EPFL   (Switzerland)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 85008034265     PISSN: 08853010     EISSN: None     Source Type: Journal    
DOI: 10.1109/TUFFC.2010.1417     Document Type: Article

References (29)

1. H. Zhang and E. S. Kim, “Micromachined acoustic resonant mass sensor,” J. Micromech. Syst., vol. 14, no. 4, pp. 699–706, Aug. 2005.
2. J. Weber, W. M. Albers, J. Tuppurainen, M. Link, R. Gabl, W. Wersing, and M. Schreiter, “Shear mode FBARs as highly sensitive liquid biosensors,” Sens. Actuators A, vol. 128, no. 1, pp. 84–88, Mar. 2006.
3. S. Rey-Mermet, R. Lanz, and P. Muralt, “Bulk acoustic wave resonator operating at 8 GHz for gravimetric sensing of organic films,” Sens. Actuators B, vol. 114, no. 2, pp. 681–686, Apr. 2006.
4. B. P. Otis and J. M. Rabaey, “A 300 µW 1.9-GHz CMOS oscillator utilizing micromachined resonators,” IEEE J. Solid-State Circuits, vol. 38, no. 7, pp. 1271–1274, 2003.
5. H. Zhang, J. Kim, W. Pang, H. Yu, and E. S. Kim, “5GHz low-phase-noise oscillator based on FBAR with low TCF,” in IEEE Int. Conf. Solid-State Sensors, Actuators, Microsystems, vol. 1, 2005, pp. 1100–1101.
6. R. C. Ruby, P. Bradley, Y. Oshmyansky, A. Chien, and J. D. Larson, III, “Thin film bulk wave acoustic resonators (FBAR) for wireless applications,” in Proc. IEEE Ultrasonics Symp, vol. 1, 2001, pp. 813–821.
7. K. M. Lakin, “Thin film resonators and filters,” in Proc. IEEE Ultrasonics Symp., vol. 2, 1999, pp. 895–906.
8. K. Wang, W. Mueller, R. Ruby, M. Gat, P. Bradley, A. Barfknecht, F. Geefay, C. Han, G. Gan, A. Chien, and B. Ly, “High rejection RX filters for GSM handsets with wafer level packaging,” in Proc. IEEE Ultrasonics Symp., vol. 1, 2002, pp. 925–929.
9. T. Nishihara, T. Yokoyama, T. Miyashita, and Y. Satoh, “High performance and miniature thin film bulk acoustic wave filters for 5 GHz,” in Proc. IEEE Ultrasonics Symp., vol. 1, 2002, pp. 969–972.
10. R. Lanz, C. Lambert, L. Senn, L. Gabathuler, and G. J. Reynolds, “Aluminum-nitride manufacturing solution for BAW and other MEMS applications using a novel, high-uniformity PVD source,” in Proc. IEEE Ultrasonics Symp., 2006, pp. 1481–1485.
11. R. Ruby and P. Merchant, “Micromachined thin film bulk acoustic resonators,” in Proc. IEEE Int. Frequency Control Symp, 1994, pp. 135–138.
12. R. Aigner, N.-H. Huynh, M. Handtmann, and S. Marksteiner, “Behavior of BAW devices at high power levels,” in IEEE Int. Microwave Symp. Dig., 2005, pp. 429–432.
13. W. Pang, H. Zhang, H. Yu, C.-Y. Lee, and E. S. Kim, “Electrical frequency tuning of film bulk acoustic resonator,” J. Microelectromech. Syst., vol. 16, no. 6, pp. 1303–1313, 2007.
14. P. Muralt, J. Antifakos, M. Cantoni, R. Lanz, and F. Martin, “Is there a better material for thin film BAW applications than AIN?” in Proc. IEEE Ultrason. Symp., vol. 1, 2005, pp. 315–320.
15. A. K. Tagantsev, V. O. Sherman, K. F. Astafiev, J. Venkatesh, and N. Setter, “Ferroelectric materials for microwave tunable applications,” J. Electroceram., vol. 11, no. 1–2, pp. 5–66, Sep.–Nov. 2003.
16. A. Vorobiev, P. Rundqvist, K. Khamchane, and S. Gevorgian, “Silicon substrate integrated high Q-factor parallel-plate ferroelectric varactors for microwave/millimeterwave applications,” Appl. Phys. Lett., vol. 83, no. 15, pp. 3144–3146, 2003.
17. P. Bao, T. J. Jackson, X. Wang, and M. J. Lancaster, “Barium strontium titanate thin film varactors for room-temperature microwave device applications,” J. Phys. D, vol. 41, no. 6, art. no. 063001, Mar. 2008.
18. D. Kim, Y. Choi, M. G. Allen, J. S. Kenney, and D. Kiesling, “A wide-band reflection-type phase shifter at S-band using BST coated substrate,” IEEE Trans. Microw. Theory Tech., vol. 50, no. 12, pp. 2903–2909, 2002.
19. 3,” Appl. Phys. Lett., vol. 91, no. 4, art. no. 043501, 2007.
20. 3 films,” IEEE Trans. Microw. Wireless Comput. Lett., vol. 17, no. 9, pp. 655–657, Sep. 2007.
21. A. Volatier, E. Defay, M. Aid, A. N'hari, P. Ancey, and B. Dubus, “Switchable and tunable strontium titanate electrostrictive bulk acoustic wave resonator integrated with a Bragg mirror,” Appl. Phys. Lett., vol. 92, no. 3, art. no. 032906, 2008.
22. 3 thin-film capacitors,” J. Appl. Phys., vol. 102, no. 11, art. no. 114110, 2007.
23. A. Noeth, T. Yamada, A. K. Tagantsev, and N. Setter, “Electrical tuning of DC bias induced acoustic resonances in paraelectric thin films,” J. Appl. Phys., vol. 104, no. 9, art. no. 094102, 2008.
24. K. M. Lakin, G. R. Kline, and K. T. McCarron, “High-Q microwave acoustic resonators and filters,” IEEE Trans. Microw. Theory Tech., vol. 41, no. 12, pp. 2139–2146, 1993.
25. R. Lanz, “Piezoelectric thin films for bulk wave acoustic resonator applications: From processing to microwave filters,” Ph.D. dissertation, Swiss Federal Institute of Technology (EPFL), 2004.
26. 3 films,” J. Appl. Phys., vol. 103, no. 11, art. no. 014107, 2008.
27. 3 in thin film bulk acoustic resonators,” IEEE Trans. Ultrason. Ferroelectr. Freq. Control, vol. 55, no. 6, pp. 1373–1379, 2008.
28. C. Zinck, E. Defay, A. Volatier, G. Caruyer, D. P. Tanor, and L. Figuiere, “Design, integration and characterization of PZT tunable FBAR,” in IEEE Int. Symp. Appl. Ferroelectr., 2004, pp. 29–32.
29. M. Schreiter, R. Gabl, D. Pitzer, R. Primig, and W. Wersing, “Electro-acoustic hysteresis behaviour of PZT thin film bulk acoustic resonators,” J. Eur. Ceram. Soc., vol. 24, no. 6, pp. 1589–1592, 2004.