Does the local built-in potential on grain boundaries of Cu(In,Ga)Se 2 thin films benefit photovoltaic performance of the device?

Applied Physics Letters

Volumn 85, Issue 13, 2004, Pages 2625-2627

  Jiang, C S ^a   Noufi, R ^a   Ramanathan, K ^a   AbuShama, J A ^a   Moutinho, H R ^a   Al Jassim, M M ^a  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAP VALUES; PHOTOCONVERSION EFFICIENCY; PHOTOVOLTAIC PROPERTIES; SCANNING KELVIN PROBE MICROSCOPE;

ATOMIC FORCE MICROSCOPY; CAPACITANCE; CARRIER CONCENTRATION; CHARGE CARRIERS; COPPER COMPOUNDS; DIFFUSION; ELECTRONIC STRUCTURE; GALLIUM; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; PHOTOVOLTAIC EFFECTS; PROBABILITY;

THIN FILMS;

EID: 7544244143     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1793346     Document Type: Article

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