Depth profiling of Cu(In,Ga)Se2 thin films grown at low temperatures

Solar Energy Materials and Solar Cells

Volumn 93, Issue 6-7, 2009, Pages 859-863

  Kaufmann, C A ^a   Caballero, R ^a   Unold, T ^a   Hesse, R ^a   Klenk, R ^a   Schorr, S ^a   Nichterwitz, M ^a   Schock, H W ^a  

^a HAHN MEITNER INSTITUT   (Germany)

Author keywords

3 stage process; CIGSe; Depth profiling; Graded band gap; Low temperature growth

Indexed keywords

3-STAGE-PROCESS; ABSORBER LAYERS; CIGSE; CO EVAPORATIONS; CU(IN , GA)SE; DEPTH PROFILES; DEVICE PERFORMANCE; ENERGY DISPERSIVE X-RAY ANALYSIS; GRADED BAND GAP; LOW TEMPERATURES; LOW-TEMPERATURE GROWTH; PROCESS TEMPERATURES; TEMPERATURE RANGES;

ENERGY GAP; GALLIUM; SEMICONDUCTING SELENIUM COMPOUNDS; THIN FILMS;

DEPTH PROFILING;

EID: 67349248887     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2008.10.009     Document Type: Article

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