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Journal of Applied Physics

Volumn 109, Issue 6, 2011, Pages

Charge carrier trapping at passivated silicon surfaces

(4) Seiffe, Johannes a Hofmann, Marc a Rentsch, Jochen a Preu, Ralf a

a FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

A-SI:H; CAPTURE CROSS SECTIONS; CHARGE CARRIER TRAPPING; CRYSTALLINE SILICON SOLAR CELLS; EFFECTIVE CHARGE; EFFECTIVE-LIFETIME MEASUREMENTS; HIGH EFFICIENCY; INDUSTRIAL PRODUCTION; INJECTION HISTORY; PASSIVATION LAYER; PHOTOCONDUCTANCE; PHOTOVOLTAICS; QUASI-STATIC; QUASI-STATIC MODES; SILICON SURFACES; SURFACE INFLUENCES; SURFACE PASSIVATION; SURFACE RECOMBINATIONS; SURFACE STATE; TRANSIENT MEASUREMENT;

CARRIER LIFETIME; PASSIVATION; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; SILICON OXIDES; TRANSIENT ANALYSIS;

SILICON WAFERS;

EID: 79953661623 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3555622 Document Type: Article

Times cited : (8)

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