Initial oxidation stages of hydrogen- and styrene-terminated Si(100) surfaces: A molecular dynamics study

Surface Science

Volumn 605, Issue 21-22, 2011, Pages

  Jariwala, Bhavin N ^a   Ciobanu, Cristian V ^a   Agarwal, Sumit ^a  

^a Department of Metallurgical and Materials Engineering   (United States)

Author keywords

Molecular dynamics; Oxidation; Silicon; Surface chemical reaction

Indexed keywords

ATOMIC OXYGEN; BACKBONDS; H-TERMINATED SURFACE; INITIAL OXIDATION; MOLECULAR DYNAMICS SIMULATIONS; OXYGEN ATOM; OXYGEN MOLECULE; PHENYL RINGS; PRIMARY REACTION; REACTIVE FORCE FIELD; SI(1 0 0); SI(100) SURFACE; SI-C BOND; SI-DIMER; SI-H BONDS; SURFACE CHEMICAL REACTION; SURFACE TERMINATION; VIBRATIONAL MODES;

ATOMS; MOLECULAR DYNAMICS; MOLECULES; O RINGS; OXIDATION; OXYGEN; REACTION KINETICS; SILICON; SILICON CARBIDE; SILICON OXIDES; STYRENE; SURFACE REACTIONS;

DIMERS;

EID: 80052055553     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2011.06.028     Document Type: Article

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