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Volumn 4, Issue 5, 2004, Pages 979-983

A self-directed growth process for creating covalently bonded molecular assemblies on the H-Si(100)-3x1 surface

Author keywords

[No Author keywords available]

Indexed keywords

DIMER; HYDROGEN; SILICON;

EID: 2642559387     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl049796g     Document Type: Article
Times cited : (44)

References (28)
  • 11
    • 2642546817 scopus 로고    scopus 로고
    • note
    • We are currently studying a prototype device that will allow electrical monitoring of changes in molecular adsorption on silicon, to be published.
  • 25
    • 2642586785 scopus 로고    scopus 로고
    • note
    • 26/6-31G* level of theory. The transition state (TS) structure at this level of theory occurs at a C-H distance of 1.55 Å. The barrier height is computed to be the B3LYP/6-31G* difference between the TS and reactant complex energies.
  • 28
    • 2642564750 scopus 로고    scopus 로고
    • note
    • Figure 3 also shows a wider linear structure labeled D. Such structures appear to be related to phase boundaries between 3 x 1 domains.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.