Initial stage of native oxide growth on hydrogen terminated silicon (111) surfaces

Journal of Applied Physics

Volumn 79, Issue 1, 1996, Pages 472-477

  Ogawa, Hiroki ^a   Ishikawa, Kenji ^a   Inomata, Carlos ^a   Fujimura, Shuzo ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000758956     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.360853     Document Type: Article

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