High-performance Ge nMOSFETs with n+-p junctions formed by spin-on dopant

IEEE Electron Device Letters

Volumn 32, Issue 9, 2011, Pages 1203-1205

  Jamil, M ^a   Mantey, J ^a   Onyegam, E U ^a   Carpenter, G D ^b   Tutuc, E ^a   Banerjee, S K ^a  

^a The University of Texas at Austin   (United States)

^b IBM   (United States)

Author keywords

Diffusion; germanium; MOSFET

Indexed keywords

DRIVE CURRENTS; EFFECTIVE FIELD; GE(100); HIGH MOBILITY; IDEALITY FACTORS; IMPLANTATION DAMAGE; IMPLANTED DEVICE; LOW DEFECT DENSITIES; MOS-FET; NMOSFETS; RAPID THERMAL DIFFUSION; SIMPLE APPROACH; SPIN-ON DOPANT;

DEFECT DENSITY; DIFFUSION; DOPING (ADDITIVES); ELECTRIC BREAKDOWN; GERMANIUM OXIDES; MOSFET DEVICES; PASSIVATION;

GERMANIUM;

EID: 80052033653     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2160142     Document Type: Article

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