Mechanisms for low on-state current of Ge (SiGe) nMOSFETs: A comparative study on gate stack, resistance, and orientation-dependent effective masses

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2009, Pages 238-239

  Oh, J ^a   Ok, I ^a   Kang, C Y ^a   Jamil, M ^b   Lee, S H ^b   Loh, W Y ^a   Huang, J ^a   Sassman, B ^a   Smith, L ^c   Parthasarathy, S ^d   Coss, B E ^e   Choi, W H ^f   Lee, H D ^f   Cho, M ^g   Banerjee, S K ^b   Majhi, P ^a   Kirsch, P D ^a   Tseng, H H ^a   Jammy, R ^a  

^a SEMATECH   (United States)

^b UNIVERSITY OF TEXAS AT AUSTIN   (United States)

^c SYNOPSYS INC   (United States)

^d UNIVERSITY OF FLORIDA   (United States)

^e UNIVERSITY OF TEXAS AT DALLAS   (United States)

^f Chungnam National University   (South Korea)

^g Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL DIRECTIONS; COMPARATIVE STUDIES; DENSITY OF STATE; DRIVE CURRENTS; EFFECTIVE MASS; GATE STACKS; HIGH CONDUCTIVITY; INTERFACE TRAP DENSITY; L-VALLEY; LOW DENSITY; NMOSFET; NMOSFETS; ON STATE CURRENT; P-MOSFETS; SPECIFIC CONTACT RESISTIVITY; SYSTEMATIC STUDY;

CARRIER CONCENTRATION; ELECTRIC BREAKDOWN; ELECTRON MOBILITY; ELECTRON TRANSPORT PROPERTIES; GERMANIUM; PRASEODYMIUM COMPOUNDS; TRANSPORT PROPERTIES;

MOSFET DEVICES;

EID: 71049190976     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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