Germanium n+p diodes: A dilemma between shallow junction formation and reverse leakage current control

IEEE Transactions on Electron Devices

Volumn 57, Issue 3, 2010, Pages 665-670

  Chao, Yu Lin ^a   Woo, Jason C S ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Activation analysis; Diffusion processes; Germanium; Junctions; Phosphorus

Indexed keywords

CONCENTRATION-DEPENDENT DIFFUSION; DEFECT ANNIHILATION; DEPLETION REGION; DIFFUSION PROCESS; DIFFUSION PROCESSES; DOPANT ACTIVATION; DOPANT CONCENTRATIONS; FABRICATION PROCESS; FAST DIFFUSION; HIGH-TEMPERATURE ANNEALING; JUNCTION LEAKAGES; JUNCTIONS; PHOSPHORUS DIFFUSION; REVERSE LEAKAGE CURRENT; SHALLOW JUNCTION; SOLID SOLUBILITIES; THERMAL BUDGET;

CONCENTRATION (PROCESS); DIFFUSION; ELECTRIC CURRENT CONTROL; FIELD EFFECT TRANSISTORS; GERMANIUM; PHOSPHORUS; POWER CONVERTERS; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; SURFACE DEFECTS;

ACTIVATION ANALYSIS;

EID: 77649191798     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2009.2039542     Document Type: Article

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