Minimization of amorphous layer in Ar + ion milling for UHR-EM

Ultramicroscopy

Volumn 111, Issue 8, 2011, Pages 1224-1232

  Suess M J ^a   Mueller, E ^a   Wepf, R ^a  

^a ETH ZURICH   (Switzerland)

Author keywords

Etching parameters; Ion milling; Sample preparation; Silicon; TEM; TRIM simulation

Indexed keywords

ACCELERATION VOLTAGES; AMORPHOUS LAYER; COMPREHENSIVE STUDIES; ETCHING PARAMETERS; EXPERIMENTAL DATA; HIGH RESOLUTION; ION MILLING; LOW VOLTAGES; MODEL ESTIMATION; SAMPLE PREPARATION; TEM SAMPLE PREPARATION; TRIM SIMULATION;

ESTIMATION; ETCHING; IONS; MILLING (MACHINING);

AMORPHOUS SILICON;

ARGON; SILICON;

ANALYTIC METHOD; ARTICLE; COMPUTER SIMULATION; CONTROLLED STUDY; ELECTRIC POTENTIAL; IMAGE ANALYSIS; IMAGE QUALITY; INTERMETHOD COMPARISON; IONIZATION; MATHEMATICAL COMPUTING; PROCESS MODEL; SCANNING ELECTRON MICROSCOPY; THEORETICAL MODEL; TRANSMISSION ELECTRON MICROSCOPY;

EID: 80051824643     PISSN: 03043991     EISSN: 18792723     Source Type: Journal    
DOI: 10.1016/j.ultramic.2011.03.004     Document Type: Article

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