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Journal of Applied Physics

Volumn 106, Issue 4, 2009, Pages

Amorphization of crystalline Si due to heavy and light ion irradiation

(4) Edmondson, P D a Riley, D J a Birtcher, R C b Donnelly, S E a

a UNIVERSITY OF SALFORD (United Kingdom)

b ARGONNE NATIONAL LABORATORY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COLLISION CASCADE; CRYSTAL-AMORPHOUS; CRYSTALLINE SI; CRYSTALLINE SILICONS; IN-SITU; ION IRRADIATION; LIGHT ION IRRADIATION; LOW TEMPERATURES; NUMERICAL MODELS; ROOM TEMPERATURE; SCIENTIFIC LITERATURE;

AMORPHIZATION; CRYSTALLINE MATERIALS; IONS; IRRADIATION; LIGHT TRANSMISSION; TRANSMISSION ELECTRON MICROSCOPY; XENON;

AMORPHOUS SILICON;

EID: 69749100150 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3195081 Document Type: Article

Times cited : (31)

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