Anomalous surface amorphization of Si(001) induced by 3-5 keV Ar+ ion bombardment

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 4 A, 2001, Pages 2119-2122

  Nakajima, K ^a   Toyofuku, H ^a   Kimura, K ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

Amorphization; Defect; High resolution; Ion implantation; RBS; Ultralow energy

Indexed keywords

ARGON; COMPUTER SIMULATION; CRYSTAL DEFECTS; ION BOMBARDMENT; ION IMPLANTATION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON WAFERS;

HIGH RESOLUTION RUTHERFORD BACKSCATTERING SPECTROSCOPY (HRRBS);

AMORPHIZATION;

EID: 0035302003     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.2119     Document Type: Article

References (8)