Hole transport properties of p-type polycrystalline ZnO film using a dual-acceptor doping method with lithium and nitrogen

Thin Solid Films

Volumn 518, Issue 12, 2010, Pages 3428-3431

  Wang, X H ^a,b   Yao, B ^b   Cong, C X ^b   Wei, Z P ^b   Shen, D Z ^b   Zhang, Z Z ^b   Li, B H ^b   Lu, Y M ^b   Zhao, D X ^b   Zhang, J Y ^b   Fan, X W ^b  

^a SHANGHAI DIANJI UNIVERSITY   (China)

^b CHANGCHUN INSTITUTE OF OPTICS   (China)

Author keywords

Hall effect measurement; P type ZnO; Polycrystalline film; Transport properties

Indexed keywords

ACCEPTOR DOPING; GRAIN BOUNDARY SCATTERING; HALL EFFECT MEASUREMENT; HOLE TRANSPORTS; IONIZED IMPURITIES; P TYPE ZNO; P-TYPE; POLYCRYSTALLINE FILM; POLYCRYSTALLINE ZNO; TEMPERATURE DEPENDENT; THEORETICAL MODELS; ZNO;

GRAIN BOUNDARIES; LATTICE VIBRATIONS; LITHIUM; METALLIC FILMS; SINGLE CRYSTALS; TRANSPORT PROPERTIES; ZINC OXIDE;

HOLE MOBILITY;

EID: 77649193780     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.12.007     Document Type: Article

References (22)

1. Kawasaki M., Ohtomo A., Ohkuho I., Koinuma H., Tang Z.K., Yu P., Wong G.K.L., Zhang B.P., and Segawa Y. Mater. Sci. Eng. B 56 (1998) 239
2. Yeon S.J., Kononenko V.O., and Won-Kook C. Solid State Commun. 137 (2006) 474
3. Krtschil A., Dadgar A., Oleynik N., Blasing J., Diez A., and Krost A. Appl. Phys. Lett. 87 (2005) 262105
4. Zhang S.B., Wei S.H., and Zunger A. Phys. Rev. B 63 (2001) 075205
5. Lee E.C., Kim Y.S., Jin Y.G., and Chang K.J. Phys. Rev. B 64 (2001) 085120
6. Liang H.W., Lu Y.M., Shen D.Z., Liu Y.C., Yan J.F., Shan C.X., Li B.H., Zhang Z.Z., Zhang J.Y., and Fan X.W. Phys. Status Solidi A 202 (2005) 1060
7. Look D.C., Reynolds D.C., Litton C.W., Jones R.L., Eason D.B., and Cantwell G. Appl. Phys. Lett. 81 (2002) 1830
8. Hwang D.K., Kim H.S., Lim J.H., Oh J.Y., Yang J.H., Park S.J., Kim K.K., Look D.C., and Park Y.S. Appl. Phys. Lett. 86 (2005) 151917
9. Kim K.K., Kim H.S., Hwang D.K., Lim J.H., and Park S.J. Appl. Phys. Lett. 83 (2003) 63
10. Ryu Y.R., Lee T.S., and White H.W. Appl. Phys. Lett. 83 (2003) 87
11. Look D.C., Renlund G.M., Burgener R.H., and Sizelove J.R. Appl. Phys. Lett. 85 (2004) 5269
12. Vaithianathan V., Lee B.T., and Kim S.S. Appl. Phys. Lett. 86 (2005) 062101
13. Xiu F.X., Yang Z., Mandalapu L.J., Zhao D.T., Liu J.L., and Beyermann W.P. Appl. Phys. Lett. 87 (2005) 152101
14. Makino T., Ohtomo A., Tsukazaki A., Kawasaki M., and Koinuma H. Jpn. J. Appl. Phys. 45 (2006) 6346
15. Sun J.W., Lu Y.M., Liu Y.C., Shen D.Z., Zhang Z.Z., Li B.H., Zhang J.Y., Yao B., Zhao D.X., and Fan X.W. Appl. Phys. Lett. 89 (2006) 232101
16. Steinhauser J., Faÿ S., Oliveira N., Vallat-Sauvain E., and Ballif C. Appl. Phys. Lett. 90 (2007) 142107
17. Wang X.H., Yao B., Wei Z.P., Sheng D.Z., Zhang Z.Z., Li B.H., Lu Y.M., Zhao D.X., Zhang J.Y., Fan X.W., Guan L.X., and Cong C.X. J. Phys. D: Appl. Phys. 39 (2006) 4568
18. Wang X.H., Yao B., Zhang Z.Z., Li B.H., Wei Z.P., Shen D.Z., Lu Y.M., and Fan X.W. Semicond. Sci. Technol. 21 (2006) 494
19. Seto J.Y.W. J. Appl. Phys. 46 (1975) 5247
20. Look D.C. Semicond. Sci. Technol. 20 (2005) S55
21. Xiao Z.Y., Liu Y.C., Li B.H., Zhang J.Y., Lu Y.M., Shen D.Z., and Fan X.W. Semicond. Sci. Technol. 21 (2006) 1522
22. Zu P., Tang Z.K., Wong G.K.L., Kawasaki M., Ohtomo A., Koinuma H., and Segawa Y. Solid State Commun. 103 (1997) 459