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Volumn 208, Issue 8, 2011, Pages 1920-1924

A comparative study of the microstructure-dielectric properties of crystalline SrTiO 3 ALD films obtained via seed layer approach

Author keywords

atomic layer deposition; dielectric properties; high k dielectrics; metal insulator metal capacitors; microstructure; SrTiO 3

Indexed keywords

COMPARATIVE STUDIES; CRYSTALLINE STATE; HIGH-K DIELECTRIC; METAL-INSULATOR-METAL CAPACITORS; NANO-CRACKS; POST-DEPOSITION ANNEAL; SEED LAYER; SRTIO; TEMPLATE APPROACH; THERMALLY STABLE;

EID: 80051692744     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.201026710     Document Type: Article
Times cited : (22)

References (17)
  • 7
    • 80051697765 scopus 로고    scopus 로고
    • International Technology Roadmap for Semiconductors, 2009 edition, Front End Processes
    • International Technology Roadmap for Semiconductors, 2009 edition, Front End Processes,.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.