Atomic layer deposition of strontium titanate films using Sr( tBu3Cp)2 and Ti(OMe)4

Journal of the Electrochemical Society

Volumn 157, Issue 1, 2010, Pages

  Popovici, M ^a   Van Elshocht, S ^a   Menou, N ^a   Swerts, J ^a   Pierreux, D ^b   Delabie, A ^a   Brijs, B ^a   Conard, T ^a   Opsomer, K ^a   Maes, J W ^b   Wouters, D J ^a   Kittl, J A ^a  

^a IMEC   (Belgium)

^b Advanced Semiconductor Materials Belgium   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

BINARY OXIDES; CAPACITANCE-EQUIVALENT THICKNESS; CRYSTALLIZATION ONSET TEMPERATURE; CRYSTALLIZATION TEMPERATURE; CUBIC CELLS; DIELECTRIC CONSTANTS; DYNAMIC RANDOM ACCESS MEMORY; HIGH-K DIELECTRIC; RATIO CONTROL; SATURATION BEHAVIOR; SRTIO; STO FILMS; STO THIN FILMS; STRONTIUM TITANATE;

CRYSTALLIZATION; DEPOSITION; OXIDE MINERALS; PEROVSKITE; RANDOM ACCESS STORAGE; REFRACTIVE INDEX; STRONTIUM ALLOYS; STRONTIUM COMPOUNDS; THICKNESS MEASUREMENT;

STRONTIUM;

EID: 72249116108     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3244213     Document Type: Article

References (26)

1. V. Pore, A. Rahtu, M. Leskela, M. Ritala, T. Sajavaara, and J. Keinonen, Chem. Vap. Deposition, 10, 143 (2004). 10.1002/cvde.200306289
2. D.-S. Kil, J.-M. Lee, and J.-S. Roh, Chem. Vap. Deposition, 8, 195 (2002). 10.1002/1521-3862(20020903)8:5<195::AID-CVDE195>3.0.CO;2-9
3. A. Kosola, M. Putkonen, L.-S. Johansson, and L. Niinisto, Appl. Surf. Sci., 211, 102 (2003). 10.1016/S0169-4332(03)00175-2
4. O. S. Kwon, S. K. Kim, M. Cho, C. S. Hwang, and J. Jeong, J. Electrochem. Soc., 152, C229 (2005). 10.1149/1.1869292
5. O. S. Kwon, S. W. Lee, J. H. Ham, and C. S. Hwang, J. Electrochem. Soc., 154, G127 (2007). 10.1149/1.2720763
6. J.-H. Ahn, S.-W. Kang, J.-Y. Kim, J.-H. Kim, and J.-S. Roh, J. Electrochem. Soc., 155, G185 (2008). 10.1149/1.2960898
7. S. W. Lee, J. H. Han, O. S. Kwon, and C. S. Hwang, J. Electrochem. Soc., 155, G253 (2008). 10.1149/1.2976211
8. S. W. Lee, O. S. Kwon, J. H. Han, and C. S. Hwang, Appl. Phys. Lett., 92, 222903 (2008). 10.1063/1.2939102
9. S. Bhaskar, D. Allgeyer, and J. A. Smythe III, Appl. Phys. Lett., 89, 254103 (2006). 10.1063/1.2410232 (Pubitemid 46035219)
10. J. H. Lee, Y. J. Cho, Y. S. Min, D. Kim, and S. W. Rhee, J. Vac. Sci. Technol. A, 20, 1828 (2002). 10.1116/1.1500745 (Pubitemid 35172447)
11. S. W. Lee, O. S. Kwon, and C. S. Hwang, Microelectron. Eng., 80, 158 (2005). 10.1016/j.mee.2005.04.060 (Pubitemid 40753069)
12. M. Vehkamäki, T. Hatanpää, T. Hänninen, M. Ritala, and M. Leskelä, Electrochem. Solid-State Lett., 2, 504 (1999). 10.1149/1.1390884
13. M. Vehkamaki, T. Hanninen, M. Ritala, M. Leskela, T. Sajavaara, E. Rauhala, and J. Keinonen, Chem. Vap. Deposition, 7, 75 (2001). 10.1002/1521-3862(200103)7:2<75::AID-CVDE75>3.0.CO;2-B
14. A. Rahtu, T. Hanninen, and M. Ritala, J. Phys. IV, 11, 923 (2001). 10.1051/jp4:20013115
15. T. Hatanpaa, M. Ritala, and M. Leskela, J. Organomet. Chem., 692, 5256 (2007). 10.1016/j.jorganchem.2007.08.008 (Pubitemid 47513727)
16. M. Vehkamaki, Ph.D. Thesis, University of Helsinki, Helsinki, Finland (2007).
17. G. E. Jellison, Jr., in Handbook of Silicon Semiconductor Metrology, A. C. Diebold, Editor, p. 752, Marcel Dekker, New York (2001).
18. M. Wormington, C. Panaccione, K. M. Matney, and D. K. Bowen, Philos. Trans. R. Soc. London, Ser. A, 357, 2827 (1999). 10.1098/rsta.1999.0469
19. Powder Diffraction File, Card no. 00-035-0734, International Center for Diffraction Data, Newtown Square, PA.
20. S. Ruddlesden and P. Popper, Acta Crystallogr., 10, 538 (1957). 10.1107/S0365110X57001929
21. Powder Diffraction File, Card no. 00-006-0520, International Center for Diffraction Data, Newtown Square, PA.
22. Powder Diffraction File, Card no. 21-1272, International Center for Diffraction Data, Newtown Square, PA.
23. Powder Diffraction File, Card no. 21-1276, International Center for Diffraction Data, Newtown Square, PA.
24. P. Fisher, H. Du, M. Skowronski, P. A. Salvador, O. Maksimov, and X. Weng, J. Appl. Phys., 103, 013519 (2008). 10.1063/1.2827992
25. W. L. Bond, J. Appl. Phys., 36, 1674 (1965). 10.1063/1.1703106
26. S. Clima, G. Pourtois, N. Menou, M. Popovici, A. Rothschild, B. Kaczer, S. Van Elshocht, X. Wang, J. Swerts, D. Pierreux, Microelectron. Eng., 86, 1936 (2009). 10.1016/j.mee.2009.03.029