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Volumn 519, Issue 20, 2011, Pages 6763-6768

Surface energy modification of SiOxCyHz film using PECVD by controlling the plasma processes for OMCTS (Si 4O4C8H24) precursor

(4) Jin, Su B a Choi, Yoon S a Choi, In S a Han, Jeon G a

a Sungkyunkwan University (South Korea)

Author keywords

Chemical structure; OMCTS precursor; Suitable dissociation; Surface energy

Indexed keywords

INPUT POWER; IONIZED ATOM; OMCTS PRECURSOR; OPTICAL EMISSION SPECTROMETRY; OXYGEN CARRIER; PLASMA PROCESS; POLYCARBONATE SUBSTRATES; RADIO FREQUENCY PLASMA; RF-POWER; ROOM TEMPERATURE; SUITABLE DISSOCIATION; SURFACE ENERGIES;

ANGLE MEASUREMENT; ATOMIC FORCE MICROSCOPY; CHEMICAL PROPERTIES; CHEMICAL VAPOR DEPOSITION; CONTACT ANGLE; DISSOCIATION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; INTERFACIAL ENERGY; IONIZATION OF GASES; OPTICAL EMISSION SPECTROSCOPY; OXYGEN; PLASMA DIAGNOSTICS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PLASMAS; PROCESS CONTROL; SILICON COMPOUNDS; SURFACE CHEMISTRY;

SURFACE MORPHOLOGY;

EID: 80051548856 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2011.01.214 Document Type: Conference Paper

Times cited : (10)

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