SCOPUS 정보 검색 플랫폼

Volumn 518, Issue 22, 2010, Pages 6385-6389

Characterization of silicon oxide gas barrier films with controlling to the ion current density (ion flux) by plasma enhanced chemical vapor deposition

(5) Jin, Su B a Kim, Youn J a Choi, Yoon S a Choi, In S a Han, Jeon G a

a Sungkyunkwan University (South Korea)

Author keywords

Barrier property; Chemical structure; Ion current density; Low temperature; Planar ring size

Indexed keywords

BARRIER PROPERTIES; CHEMICAL STRUCTURE; ION CURRENT DENSITY; LOW TEMPERATURES; PLANAR RING;

CHIP SCALE PACKAGES; COATINGS; CURRENT DENSITY; FOURIER TRANSFORMS; ION BOMBARDMENT; IONS; OPTICAL EMISSION SPECTROSCOPY; OXIDE FILMS; PLASMA DEPOSITION; PLASMA DIAGNOSTICS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PLASMAS; POLYETHYLENE TEREPHTHALATES; SILICON COMPOUNDS; SILICON OXIDES; STRUCTURE (COMPOSITION); SUBSTRATES; THERMOPLASTICS; WATER VAPOR;

GAS PERMEABLE MEMBRANES;

EID: 77956057753 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2010.03.134 Document Type: Conference Paper

Times cited : (24)

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