An AES study of the influence of carbon on the chemical structure of some oxide films deposited by PECVD of organosilicon precursors

Applied Surface Science

Volumn 137, Issue 1-3, 1999, Pages 136-141

  Deville, J P ^a   Lang, B ^a   Raynaud, P ^b  

^a INSTITUT DE PHYSIQUE ET CHIMIE DES MATÉRIAUX DE STRASBOURG   (France)

^b UNIVERSITÉ PAUL SABATIER   (France)

Author keywords

Carbon; Organosilicon precursors; Plasma enhanced chemical vapour deposition (PECVD)

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CHEMICAL BONDS; FILMS; MOLECULAR STRUCTURE; ORGANOMETALLICS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; STOICHIOMETRY;

SILICON OXIDE FILMS;

SILICON COMPOUNDS;

EID: 0032762004     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(98)00465-6     Document Type: Article

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