Effect of rf bias (ion current density) on the hardness of amorphous silicon oxide films deposited by plasma enhanced chemical vapor deposition

Surface and Coatings Technology

Volumn 205, Issue SUPPL. 1, 2010, Pages

  Jin, Su B ^a   Choi, Yoon S ^a   Kim, Youn J ^a   Choi, In S ^a   Han, Jeon G ^a  

^a Sungkyunkwan University   (South Korea)

Author keywords

A SiO2; Hardness; Ion current density; Low temperature; Rf bias

Indexed keywords

A-SIO2; BARRIER PROPERTIES; CHEMICAL RESISTANT; COATING LAYER; DENSER STRUCTURE; DIGITAL APPLICATIONS; ELECTRONIC BONDING; HIGH HARDNESS; ION CURRENT DENSITY; LOW TEMPERATURE PLASMAS; LOW TEMPERATURES; META-STABLE; MOBILE ELECTRONICS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION (PE CVD); POLYMER SUBSTRATE; PRIME COATINGS; PROCESS TEMPERATURE; RF BIAS; RF-POWER; SILICON OXIDE THIN FILMS; SUBSTRATE TEMPERATURE; THERMODYNAMICALLY STABLE;

AMORPHOUS FILMS; AMORPHOUS SILICON; CAMERAS; CURRENT DENSITY; DEPOSITION; FUNCTIONAL POLYMERS; HARDNESS; IONS; KURCHATOVIUM; OPTICAL COATINGS; OXIDE FILMS; PLASMA DEPOSITION; PLASMAS; PLASTIC COATINGS; POLYMER FILMS; PROTECTIVE COATINGS; SEMICONDUCTING SILICON COMPOUNDS; SILICON OXIDES; SUBSTRATES; THIN FILMS; VAPOR DEPOSITION;

PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

EID: 78649938828     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.surfcoat.2010.06.061     Document Type: Article

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