Characterization and performance of Schottky diode based on wide band gap semiconductor ZnO using a low-cost and simplified sol-gel spin coating technique

Microelectronic Engineering

Volumn 88, Issue 9, 2011, Pages 2894-2899

  Farag, A A M ^a   Farooq, W A ^b   Yakuphanoglu, F ^c  

^a Ain Shams University   (Egypt)

^b KING SAUD UNIVERSITY   (Saudi Arabia)

^c FIRAT UNIVERSITY   (Turkey)

Author keywords

Barrier height; n ZnO; Schottky contact; Series resistance

Indexed keywords

BARRIER HEIGHTS; CURRENT LIMITATION; CURRENT MECHANISMS; CURRENT VOLTAGE; FORWARD BIAS; FORWARD CURRENTS; IDEALITY FACTORS; INTERFACE STATE; LOW FREQUENCY; N-ZNO; P-TYPE SI; POOLE-FRENKEL; RECTIFICATION BEHAVIOR; REVERSE BIAS; SCHOTTKY; SCHOTTKY CONTACTS; SCHOTTKY DIODES; SERIES RESISTANCES; SOL-GEL SPIN COATING; SOL-GEL SPIN COATING METHOD; SPACE CHARGE LIMITED CONDUCTION; WIDE-BAND-GAP SEMICONDUCTOR; ZNO;

BIAS VOLTAGE; CAPACITANCE; CAPACITANCE MEASUREMENT; COATINGS; CURRENT VOLTAGE CHARACTERISTICS; DIODES; ENERGY GAP; GELS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON; SEMICONDUCTOR DIODES; SOL-GEL PROCESS; SOL-GELS; SOLS; ZINC OXIDE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 80051546821     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2011.03.016     Document Type: Article

References (47)

1. R.L. Hoffman, B.J. Norris, and J.F. Wager Appl. Phys. Lett. 82 2003 733
2. E. Elangovan, and K. Ramamurthi Thin Solid Films 476 2005 231
3. B. Thangaraju Thin Solid Films 402 2002 71
4. S.Y. Lee, and B.O. Park Thin Solid Films 510 2006 154
5. M.R. Islam, and J. Podder Cryst. Res. Technol. 44 2009 286
6. L.J. Brillson, H.L. Mosbacker, M.J. Hetzer, Y. Strzhemechny, D.C. Look, G. Cantwell, J. Zhang, and J.J. Song Appl. Surf. Sci. 254 2008 8000
7. K. Ravichandran, B. Sakthivel, and P. Philominathan Cryst. Res. Technol. 45 2010 292
8. T.K. Subramanayam, B. Srinivasulu Naidu, and S. Uthanna Cryst. Res. Technol. 35 2000 1193
9. D. Song, A.G. Aberle, and J. Xia Appl. Surf. Sci. 195 2002 291
10. S.H. Jeong, S. Kho, D. Jung, S.B. Lee, and J.H. Boo Surf. Coat. Technol. 174-175 2003 187
11. Y.Y. Villanueva, D. Liu, and P.T. Cheng Thin Solid Films 501 2006 366
12. S. Sun, G.S. Tompa, C. Rice, X.W. Sun, Z.S. Lee, S.C. Lien, C.W. Huang, L.C. Cheng, and Z.C. Feng Thin Solid Films 516 2008 5571
13. K. Ogata, K. Koike, T. Tanite, T. Komuro, F. Yan, S. Sasa, M. Inoue, and M. Yano J. Cryst. Growth 251 2003 623
14. C. Elena, and I. Gheorghe Int. J. Comput. 4 2010 243
15. Hui-Zhen Wu, Xiano-Ling Xu, Dong-Jiang Qiu, Ke-Ming He, and Shou Xiang Chin. Phys. Lett. 17 2000 694
16. V. Musat, M. Mazilu, I. Diaconu, and S. Balta Ovid. Univ. Ann. Chem. 20 2009 119
17. F. Yakuphanoglu, Y. Caglar, M. Caglar, and S. Ilican Mater. Sci. Semicond. Process. 13 2010 137
18. B.J. Coppa, R.F. Davis, and R.J. Nemanich Appl. Phys. Lett. 82 2003 400
19. H. Sheng, S. Muthukumar, N.W. Emanetoglu, and Y. Lu Appl. Phys. Lett. 80 2002 2132
20. H. Fabricius, T. Skettrup, and P. Bisgaard Appl. Opt. 25 1986 2764
21. Y. Min, H.L. Tuller, S. Palzer, J. Wöllenstein, and H. Böttner Sens. Actuat. B 93 2003 435
22. G. Yuan, Z. Ye, L. Zhu, J. Huang, Q. Qian, and B. Zhao J. Cryst. Growth 268 2004 169
23. Z. Ye, G. Yuan, B. Li, L. Zhu, B. Zhao, and J. Huang Mater. Chem. Phys. 93 2005 170
24. A.A. Dakhel J. Cryst. Growth 311 2009 4183
25. S. Majumdar, and P. Banerji Sens. Actuat. B 140 2009 134
26. S. Aydoan, K. inar, H. Asil, C. Cokun, and A. Türüt J. Alloys Compd. 476 2009 913
27. M.M. El-Nahass, K.F. Abd-El-Rahman, A.A.M. Farag, and A.A.A. Darwish Organic Electron. 6 2005 129
28. A.A.M. Farag, I.S. Yahia, T. Wojtowicz, and G. Karczewski J. Phys. D: Appl. Phys. 43 2010 215102
29. W. Chandra, L.K. Ang, K.L. Pey, and C.M. Ng Appl. Phys. Lett. 90 2007 153505
30. M.M. Akhmedov, M.K. Kerimov, B.A. Suleimanov, and S.A. Mansimov Tr. J. Phys. 22 1997 253
31. B. Boyarbay, H.C. etin, M. Kaya, and E. Ayyildiz Microelectron. Eng. 85 2008 721
32. A.M. Farag, A. Ashery, F.S. Terra, and G.M. Mahmoud J. Optoelectron. Adv. Matter 10 2008 2713
33. A. Turut, M. Saglam, H. Efeoglu, N. Yalcin, M. Yildirim, and B. Abay Physica B 205 1995 41
34. S.K. Cheung, and N.W. Cheung Appl. Phys. Lett. 49 1986 85
35. C.D. Lien, F.C.T. So, and M.-A. Nicolet IEEE Trans. Electron. Dev. ED-31 1984 1502
36. K.E. Bohlin J. Appl. Phys. 60 1986 1223
37. Z. Tekeli, S. Altindal, M. akmak, S. Özelik, and E. Özbay Microelectron. Eng. 85 2008 2316
38. T.S. Shafai, and R.D. Gould Int. J. Electron. 73 1992 307
39. R.D. Gould, and C.J. Bowler Thin Solid Films 164 1988 281
40. S. Aydogan, M. Saglam, and A. Turut Polymer 46 2005 563
41. E.H. Nicollian, and J.R. Brews Metal-Oxide Semiconductor (MOS) Physics and Technology 1982 Wiley New York
42. J.H. Werner Metallization and Metal-Semiconductor Interface 1989 Plenum New York
43. S.K. Das, and G.C. Morris Sol. Energy Mater. Sol. Cells 30 1993 107
44. O. Pakma, N. Serin, T. Serin, and S. Altindal J. Phys. D: Appl. Phys. 41 2008 215103
45. A. Tataroglu, and S. Altindal Microelectron. Eng. 83 2006 582
46. F. Yakuphanoglu, and S. Okur Microelectron. Eng. 87 2010 30
47. B. Tataroglu, S. Altindal, and A. Tataroglu Microelectron. Eng. 83 2006 2021