Nanocrystalline Pr-doped ZnO insulator for metal-insulator-Si Schottky diodes

Journal of Crystal Growth

Volumn 311, Issue 17, 2009, Pages 4183-4187

  Dakhel, A A ^a  

^a UNIVERSITY OF BAHRAIN   (Bahrain)

Author keywords

A1. Nanograin doped ZnO; A1. Pr doped ZnO; B1. Oxidation of Zn; B2. Insulator ZnO; B3. Metal oxide Si device

Indexed keywords

A1. NANOGRAIN-DOPED ZNO; A1. PR-DOPED ZNO; B1. OXIDATION OF ZN; B2. INSULATOR ZNO; B3. METAL-OXIDE-SI DEVICE;

ABSORPTION SPECTROSCOPY; ENERGY DISPERSIVE SPECTROSCOPY; INSULATION; LIGHT TRANSMISSION; MEDICAL IMAGING; METAL INSULATOR BOUNDARIES; NANOCRYSTALLINE MATERIALS; OXIDATION; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON COMPOUNDS; SILICON; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS; ZINC; ZINC OXIDE;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 68549107757     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.07.007     Document Type: Article

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